203424
氧化铟(III)
99.998% trace metals basis
别名:
三氧化二铟, 氧化铟
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关于此项目
经验公式（希尔记法）:
In2O3
化学文摘社编号:
分子量:
277.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
215-193-9
MDL number:
InChI key
SHTGRZNPWBITMM-UHFFFAOYSA-N
InChI
1S/2In.3O
SMILES string
O=[In]O[In]=O
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.998% trace metals basis
form
powder
reaction suitability
reagent type: catalyst
core: indium
density
7.18 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
Quality Level
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Application
- 合成与表征：开发锡和氧化铟薄膜表面金纳米簇，从而为高级应用合成新材料（Korotcenkov et al., 2014）。
- 光催化：使用氮/硫共掺杂碳包覆氧化铟纳米颗粒作为优秀的光催化剂，为环境和能源应用提供见解（Sun et al., 2019）。
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Kelvin H L Zhang et al.
ACS nano, 6(8), 6717-6729 (2012-06-30)
The growth of In(2)O(3) on cubic Y-stabilized ZrO(2)(001) by molecular beam epitaxy leads to formation of nanoscale islands which may tilt relative to the substrate in order to help accommodate the 1.7% tensile mismatch between the epilayer and the substrate.
Shokouh S Farvid et al.
Journal of the American Chemical Society, 134(16), 7015-7024 (2012-03-28)
The kinetics of phase transformation of colloidal In(2)O(3) nanocrystals (NCs) during their synthesis in solution was explored by a combination of structural and spectroscopic methods, including X-ray diffraction, transmission electron microscopy, and extended X-ray absorption fine structure spectroscopy. Johnson-Mehl-Avrami-Erofeyev-Kholmogorov (JMAEK)
Hai Yang Peng et al.
Scientific reports, 2, 442-442 (2012-06-09)
Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of
Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
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