203424
氧化铟(III)
99.998% trace metals basis
别名:
三氧化二铟, 氧化铟
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关于此项目
经验公式（希尔记法）:
In2O3
化学文摘社编号:
分子量:
277.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
215-193-9
MDL number:
InChI key
SHTGRZNPWBITMM-UHFFFAOYSA-N
InChI
1S/2In.3O
SMILES string
O=[In]O[In]=O
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.998% trace metals basis
form
powder
reaction suitability
reagent type: catalyst
core: indium
density
7.18 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
Quality Level
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Application
- 合成与表征：开发锡和氧化铟薄膜表面金纳米簇，从而为高级应用合成新材料（Korotcenkov et al., 2014）。
- 光催化：使用氮/硫共掺杂碳包覆氧化铟纳米颗粒作为优秀的光催化剂，为环境和能源应用提供见解（Sun et al., 2019）。
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Kelvin H L Zhang et al.
ACS nano, 6(8), 6717-6729 (2012-06-30)
The growth of In(2)O(3) on cubic Y-stabilized ZrO(2)(001) by molecular beam epitaxy leads to formation of nanoscale islands which may tilt relative to the substrate in order to help accommodate the 1.7% tensile mismatch between the epilayer and the substrate.
Yiping Fang et al.
Langmuir : the ACS journal of surfaces and colloids, 27(23), 14091-14095 (2011-10-21)
In(2)O(3)@SiO(2) core-shell nanoparticles were prepared using an organic solution synthesis approach and reverse-microemulsion technique. In order to explore the availability of various silica encapsulations, a partial phase diagram for this ternary system consisting of hexane/cyclohexane (1:29 wt), surfactant (polyoxyethylene(5)nonylphenyl ether
Ilan Jen-La Plante et al.
Small (Weinheim an der Bergstrasse, Germany), 9(1), 56-60 (2012-11-06)
Nano popcorn: a new formation mechanism for the synthesis of hollow metal oxide nanoparticles through a melt fracture mechanism. The hollow nanoparticles are formed via brittle fracture following the generation of tensile stresses arising due to liquid-phase thermal expansion of
Jiefu Yin et al.
Inorganic chemistry, 51(12), 6529-6536 (2012-06-06)
We report here for the first time the hollow, metastable, single-crystal, rhombohedral In(2)O(3) (rh-In(2)O(3)) nanocrystals synthesized by annealing solvothermally prepared InOOH solid nanocrystals under ambient pressure at 400 °C, through a mechanism of the Kirkendall effect, in which pore formation
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
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