203424
氧化铟(III)
99.998% trace metals basis
别名:
三氧化二铟, 氧化铟
登录 查看组织和合同定价。
选择尺寸
关于此项目
经验公式（希尔记法）:
In2O3
化学文摘社编号:
分子量:
277.63
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
215-193-9
MDL number:
产品名称
氧化铟(III), 99.998% trace metals basis
InChI key
SHTGRZNPWBITMM-UHFFFAOYSA-N
InChI
1S/2In.3O
SMILES string
O=[In]O[In]=O
vapor pressure
<0.01 mmHg ( 25 °C)
assay
99.998% trace metals basis
form
powder
reaction suitability
reagent type: catalyst
core: indium
density
7.18 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
Quality Level
正在寻找类似产品? 访问 产品对比指南
Application
- 合成与表征：开发锡和氧化铟薄膜表面金纳米簇，从而为高级应用合成新材料（Korotcenkov et al., 2014）。
- 光催化：使用氮/硫共掺杂碳包覆氧化铟纳米颗粒作为优秀的光催化剂，为环境和能源应用提供见解（Sun et al., 2019）。
存储类别
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
Ariel Amir et al.
Proceedings of the National Academy of Sciences of the United States of America, 109(6), 1850-1855 (2012-02-09)
Slow relaxation occurs in many physical and biological systems. "Creep" is an example from everyday life. When stretching a rubber band, for example, the recovery to its equilibrium length is not, as one might think, exponential: The relaxation is slow
Di Chen et al.
Nanoscale, 4(10), 3001-3012 (2012-04-13)
With the features of high mobility, a high electric on/off ratio and excellent transparency, metal oxide nanowires are excellent candidates for transparent thin-film transistors, which is one of the key technologies to realize transparent electronics. This article provides a comprehensive
Jiefu Yin et al.
Inorganic chemistry, 51(12), 6529-6536 (2012-06-06)
We report here for the first time the hollow, metastable, single-crystal, rhombohedral In(2)O(3) (rh-In(2)O(3)) nanocrystals synthesized by annealing solvothermally prepared InOOH solid nanocrystals under ambient pressure at 400 °C, through a mechanism of the Kirkendall effect, in which pore formation
Xuming Zou et al.
ACS nano, 7(1), 804-810 (2012-12-12)
In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode
Huimeng Wu et al.
Journal of the American Chemical Society, 133(36), 14327-14337 (2011-08-11)
This Article reports a mechanistic study on the formation of colloidal UO(2)/In(2)O(3) and FePt/In(2)O(3) heterodimer nanocrystals. These dimer nanocrystals were synthesized via the growth of In(2)O(3) as the epitaxial material onto the seed nanocrystals of UO(2) or FePt. The resulting
商品
Review the potential of self-assembled multilayer gate dielectric films fabricated from silane precursors for organic, inorganic, and transparent TFT and for TFT circuitry and OLED displays.
Lanthanide ions in spectral conversion enhance solar cell efficiency via photon conversion.
我们的科学家团队拥有各种研究领域经验，包括生命科学、材料科学、化学合成、色谱、分析及许多其他领域.
联系客户支持