推荐产品
方案
99.999% trace metals basis
表单
chips
电阻率
53 Ω-cm, 20°C
粒径
≥3 mm
沸点
2830 °C (lit.)
mp
937 °C (lit.)
密度
5.35 g/mL at 25 °C (lit.)
SMILES字符串
[Ge]
InChI
1S/Ge
InChI key
GNPVGFCGXDBREM-UHFFFAOYSA-N
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储存分类代码
13 - Non Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
dust mask type N95 (US), Eyeshields, Gloves
W Streyer et al.
Optics express, 21(7), 9113-9122 (2013-04-11)
We demonstrate strong-to-perfect absorption across a wide range of mid-infrared wavelengths (5-12µm) using a two-layer system consisting of heavily-doped silicon and a thin high-index germanium dielectric layer. We demonstrate spectral control of the absorption resonance by varying the thickness of
Lu Dai et al.
Nanoscale, 5(3), 971-976 (2012-12-15)
The controllable fabrication of self-scrolling SiGe/Si/Cr helical nanoribbons on Si(111) substrates is investigated. The initial lateral etching profile of the Si(111) substrates shows a 2-fold rotational symmetry using 4% ammonia solution, which provides guidance for initial scrolling of one-end-fixed nanoribbons
Jin Liu et al.
Dalton transactions (Cambridge, England : 2003), 42(14), 5092-5099 (2013-02-13)
In this study, Zn2GeO4 hollow spheres were successfully fabricated by a template-engaged approach using zinc hydroxide carbonate (Zn4CO3(OH)6·H2O, ZHC) spheres as the template. During the hydrothermal process, Zn(2+) dissolved from the surface of the ZHC spheres could rapidly react with
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
Maurizio Mattesini et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035601-035601 (2012-12-12)
The magnetic properties, electronic band structure and Fermi surfaces of the hexagonal Cr(2)GeC system have been studied by means of both generalized gradient approximation (GGA) and the +U corrected method (GGA + U). The effective U value has been computed within the
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Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.
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