推荐产品
质量水平
检测方案
98%
折射率
n20/D 1.484 (lit.)
bp
261-263 °C (lit.)
mp
−36 °C (lit.)
密度
0.858 g/mL at 25 °C (lit.)
SMILES字符串
CCCCCCCCc1ccccc1
InChI
1S/C14H22/c1-2-3-4-5-6-8-11-14-12-9-7-10-13-14/h7,9-10,12-13H,2-6,8,11H2,1H3
InChI key
CDKDZKXSXLNROY-UHFFFAOYSA-N
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一般描述
辛基苯（1-苯基辛烷）与氟烷和1,3,5-三硝基苯形成电荷转移络合物。
应用
1-苯基辛烷被用作溶剂，研究四硫富瓦烯（TTF）衍生物在石墨上的自组装并通过扫描隧道显微镜（STM）进行观察。它还被用于研究这些化合物取代对它们之间相互作用的影响。
WGK
WGK 3
闪点(°F)
224.6 °F
闪点(°C)
107 °C
个人防护装备
Eyeshields, Gloves
Elba Gomar-Nadal et al.
Chemical communications (Cambridge, England), (7)(7), 906-907 (2003-05-13)
The synthesis, isolation and STM imaging on graphite of the cis and trans isomers of a TTF reveal isomer-dependent packing, and constitutes a way to study the non-covalent interactions at play in these systems.
Yan Yang et al.
Langmuir : the ACS journal of surfaces and colloids, 31(45), 12408-12416 (2015-10-29)
Side chains containing two diacetylene units spaced by an odd number of methylene units exhibit pronounced “bumps” composed of 0.3 nm steps, in opposite directions, at odd and even side-chain positions. In densely packed self-assembled monolayers, the bis-diacetylene bumps stack
Xiaodong Chen et al.
Nano letters, 7(11), 3483-3488 (2007-10-05)
Selective adsorption of semiconductor nanocrystals onto an organic self-organized pattern shows a time-dependent behavior. By studying the wetting behavior of delivered solvent (1-phenyloctane) on a lipid self-organized pattern and determining the adhesion energy between semiconductor nanocrystals and substrate, we obtain
Assemblies at the liquid-solid interface: chirality expression from molecular conformers.
Yong-Tao Shen et al.
Chemphyschem : a European journal of chemical physics and physical chemistry, 14(1), 92-95 (2012-11-13)
Yanqiu Jiang et al.
Scientific reports, 5, 17720-17720 (2015-12-05)
The interface between organic semiconductor and graphene electrode, especially the structure of the first few molecular layers at the interface, is crucial for the device properties such as the charge transport in organic field effect transistors. In this work, we
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