蒸汽密度
>1 (vs air)
质量水平
检测方案
97%
折射率
n20/D 1.430 (lit.)
bp
92 °C (lit.)
密度
1.08 g/mL at 25 °C (lit.)
储存温度
2-8°C
SMILES字符串
C[Si](Cl)(Cl)C=C
InChI
1S/C3H6Cl2Si/c1-3-6(2,4)5/h3H,1H2,2H3
InChI key
YLJJAVFOBDSYAN-UHFFFAOYSA-N
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一般描述
Dichloromethylvinylsilane reacts with dimethylsulphide borane to form organosilylborane, which further gets ammonolysized to form the polymer of the SiBCN.
应用
Dichloromethylvinylsilane was used as single molecular precursor for the deposition of β-SiC thin films and β -SiC nanowires by metalorganic chemical vapor deposition on bare Si 100 and Ni-coated Si 100 substrates. Dichloromethylvinylsilane was used in the synthesis and characterization of Tris(1-(dichloro(methyl)silyl)ethyl)borane,monomer.
警示用语：
Danger
危险分类
Acute Tox. 3 Inhalation - Acute Tox. 4 Oral - Flam. Liq. 2 - Skin Corr. 1B
补充剂危害
WGK
WGK 1
闪点(°F)
38.1 °F
闪点(°C)
3.4 °C
个人防护装备
Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter
法规信息
危险化学品
Synthesis and Structure Characterization of Amorphous SiBCN Ceramic Precursors.
Yajing L and Yue Z.
Rare Metals Materials and Engineering, 40, 234-237 (2011)
Influence of the Precursor Cross-Linking Route on the Thermal Stability of Si- B- C- O Ceramics.
Ischenko V, et al.
Chemistry of Materials, 20(22), 7148-7156 (2008)
Growth of β-SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane.
Kang B-C, et al.
J. Vac. Sci. Technol. B, 23(4), 1722-1725 (2005)
H Yamakita et al.
Radioisotopes, 33(8), 513-518 (1984-08-01)
Poly(methylvinylsiloxane)-bonded silica gel was synthesized by condensation reaction between silica gel and the hydrolysis product of methylvinyldichlorosilane. Graft polymerization of styrene or indene onto poly(methylvinylsiloxane)-bonded silica gel was carried out by gamma-ray irradiation and compared with that onto silica gel.
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