Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

Raman enhancement on ultra-clean graphene quantum dots produced by quasi-equilibrium plasma-enhanced chemical vapor deposition.

Nature communications (2018-01-18)

Donghua Liu, Xiaosong Chen, Yibin Hu, Tai Sun, Zhibo Song, Yujie Zheng, Yongbin Cao, Zhi Cai, Min Cao, Lan Peng, Yuli Huang, Lei Du, Wuli Yang, Gang Chen, Dapeng Wei, Andrew Thye Shen Wee, Dacheng Wei

PMID29335471

摘要

Graphene is regarded as a potential surface-enhanced Raman spectroscopy (SERS) substrate. However, the application of graphene quantum dots (GQDs) has had limited success due to material quality. Here, we develop a quasi-equilibrium plasma-enhanced chemical vapor deposition method to produce high-quality ultra-clean GQDs with sizes down to 2 nm directly on SiO