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755710

Sigma-Aldrich

Carbon nanotube, single-walled

>70% (TGA), avg. no. of layers, 1

Synonym(s):

NC-1100, SWCNT, SWNT, Single wall carbon nanotube

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1 G
CN¥479.76
50 G
CN¥1,195.10

CN¥479.76

Available to ship onApril 27, 2025Details

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1 G
CN¥479.76
50 G
CN¥1,195.10

About This Item

CAS Number:
308068-56-6
MDL number:
MFCD00133992
UNSPSC Code:
12352103
NACRES:
NA.23

CN¥479.76

Available to ship onApril 27, 2025Details

Request a Bulk Order

Quality Level

100

Assay

>70% (TGA)

form

powder

feature

avg. no. of layers 1

manufacturer/tradename

Nanocyl, Inc.

size L

× 3 μm , TEM

average diameter

2 nm

mp

3652-3697 °C (lit.)

density

1.7-1.9 g/cm3 at 25 °C (lit.)

SMILES string

[C]

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1 of 4

This Item
PHR134110918541131
Saccharin ≥99%

240931

Saccharin

Saccharin Pharmaceutical Secondary Standard; Certified Reference Material

PHR1341

Saccharin

Saccharin ≥98%

109185

Saccharin

Mettler-Toledo Calibration substance ME 51143091, Saccharin traceable to primary standards (LGC)

41131

Mettler-Toledo Calibration substance ME 51143091, Saccharin

assay

≥99%

assay

-

assay

≥98%

assay

-

Quality Level

200

Quality Level

300

Quality Level

100

Quality Level

100

solubility

acetone: 1g in 12mL(lit.), boiling water: 1g in 25mL(lit.), alcohol: 1g in 31mL(lit.)

solubility

-

solubility

H2O: soluble 1g in 290ml, acetone: soluble 1g in 12ml, alcohol: soluble 1g in 31ml, boiling water: soluble 1g in 25ml, glycerol: soluble 1g in 50ml, alcohol: very slightly soluble, chloroform: slightly soluble, diethyl ether: slightly soluble

solubility

-

mp

226-229 °C (lit.)

mp

226-229 °C (lit.)

mp

226-229 °C (lit.)

mp

226-229 °C (lit.)

form

powder

form

-

form

-

form

-

General description

These single walled carbon nanotubes (SWNTs) were produced via the Catalytic Carbon Vapor Deposition (CCVD) process. Potential applications of SWNTs are in field effect transistors (FETs), solar cells, photodetectors, high performance computation, renewable energy, optoelectronics etc.

Application

Potential applications of SWNTs are in field effect transistors (FETs), solar cells, photodetectors, high performance computation, renewable energy, optoelectronics etc.Other applications include electronics,[1]sensors,[2]composites,energy storage, study of life science systems.[3]

Preparation Note

Catalytic Carbon Vapor Deposition (CCVD) Method

Legal Information

Product of Nanocyl, Inc.

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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    Certificates of Analysis (COA)

    Lot/Batch Number
    MKCV0868
    MKCS6108
    MKCM6915
    MKCG9315
    MKCB0245V

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    Mohammad-Bagher Ebrahim-Habibi et al.
    Scientific reports, 9(1), 1273-1273 (2019-02-06)
    Investigation of non-covalent interaction of hydrophobic surfaces with the protein G (PrG) is necessary due to their frequent utilization in immunosensors and ELISA. It has been confirmed that surfaces, including carbonous-nanostructures (CNS) could orient proteins for a better activation. Herein
    Dominick J Bindl et al.
    ACS nano, 4(10), 5657-5664 (2010-10-07)
    Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges
    Wai Li Ling et al.
    ACS nano, 5(2), 730-737 (2011-01-11)
    The classical pathway of complement is an essential component of the human innate immune system involved in the defense against pathogens as well as in the clearance of altered self-components. Activation of this pathway is triggered by C1, a multimolecular
    Amin Salehi-Khojin et al.
    ACS nano, 5(1), 153-158 (2010-12-29)
    There has been recent controversy whether the response seen in carbon nanotube (CNT) chemiresistors is associated with a change in the resistance of the individual nanotubes or changes in the resistance of the junctions. In this study, we carry out

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