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910961

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di-n-butylammonium lead(II) tetraiodide

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n = 1

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Synonym(s):
(BA)2PbI4, 2D perovskite, di-n-butylammonium tetraiodoplumbate
Linear Formula:
(C4H9NH3)2PbI4
CAS Number:
132069-10-4
UNSPSC Code:
12352101
NACRES:
NA.23

form

powder

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General description

We are committed to bringing you Greener Alternative Products, which adhere to one or more of The 12 Principles of Greener Chemistry. This product has been enhanced for "Energy efficiency".

Application

Di-n-butylammonium lead(II) tetra iodide is used as a precursor material in the fabrication of lead halide perovskite solar cells. Perovskite solar cells based on DBAPbI4 have shown high power conversion efficiencies and have attracted significant attention as a low-cost and efficient alternative to traditional silicon-based solar cells. DBAPbI4-based perovskite materials find application in thin-film electronics such as transistors and light-emitting diodes (LEDs).
Organic-inorganic hybrid perovskittes based semiconducting materials exhibit excellent properties such as long charge carrier lifetime and diffusion length, and high photolumiscence quantum yield. These properties render the perovskite materials useful for applications in light emitting diodes (LEDs), lasers and photodetectors. The bis[n-butylammonium] tetraiodopumbate is 2D-layered perovskite and finds applications as violet emitter in LEDs.

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Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Repr. 1A - STOT RE 2

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

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Hsinhan Tsai et al.
Nature, 536(7616), 312-316 (2016-07-08)
Three-dimensional organic-inorganic perovskites have emerged as one of the most promising thin-film solar cell materials owing to their remarkable photophysical properties, which have led to power conversion efficiencies exceeding 20 per cent, with the prospect of further improvements towards the
Ruddlesden?Popper Hybrid Lead Iodide Perovskite 2D Homologous Semiconductors
Chemistry of Materials, 28, 2852-2867 (2016)
Duyen H Cao et al.
Journal of the American Chemical Society, 137(24), 7843-7850 (2015-05-29)
We report on the fabrication and properties of the semiconducting 2D (CH3(CH2)3NH3)2(CH3NH3)(n-1)Pb(n)I(3n+1) (n = 1, 2, 3, and 4) perovskite thin films. The band gaps of the series decrease with increasing n values, from 2.24 eV (CH3(CH2)3NH3)2PbI4 (n = 1)

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