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Sigma-Aldrich

C8-BTBT

≥99% (HPLC)

Synonym(s):

2,7-Dioctyl[1]benzothieno[3,2-b][1]benzothiophene

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About This Item

Empirical Formula (Hill Notation):
C30H40S2
CAS Number:
583050-70-8
Molecular Weight:
464.77
UNSPSC Code:
12352103
PubChem Substance ID:
329765808
NACRES:
NA.23

Assay

≥99% (HPLC)

form

powder

mp

108-112 °C

semiconductor properties

P-type (mobility=5.5 cm2/V·s)

SMILES string

CCCCCCCCC1=CC2=C(C=C1)C3=C(C(C=CC(CCCCCCCC)=C4)=C4S3)S2

InChI

1S/C30H40S2/c1-3-5-7-9-11-13-15-23-17-19-25-27(21-23)31-30-26-20-18-24(22-28(26)32-29(25)30)16-14-12-10-8-6-4-2/h17-22H,3-16H2,1-2H3

InChI key

YWIGIVGUASXDPK-UHFFFAOYSA-N

General description

C8-BTBT is a conducting polymer with [1]benzothieno[3,2-b][1]- benzothiophene (BTBT) as the base material for the development of air-stable semiconductors. It can form a spin coated thin film that can be used as a p-type semiconductor with charge mobility of 43 cm2V-1s-1. It exhibits highly ordered self-assembled monolayer (SAM) on graphene and hexagonal boron nitride (hBN) with sheet resistance: <1,000 ohm/sq

Application

C8-BTBT is a conjugating polymer that can be used in a variety of organic electronics based applications which includes organic photovoltaic cells (OPV), organic light emitting diodes (OLEDs) and organic thin film transistors (OTFTs).
High field-effect mobility of 5.5-5.7 cm2/Vs and high On/Off ratio of 109 ; solution-processed (solubility of 80 mg/mL) OFETs

Legal Information

Product of Nippon Kayaku

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Darmawan; Peter;
Advances in Functional Materials, 22(21), 4577-4583 (2012)
Jeong-Wan Jo et al.
Materials (Basel, Switzerland), 13(23) (2020-12-11)
The development of novel dielectric materials with reliable dielectric properties and low-temperature processibility is crucial to manufacturing flexible and high-performance organic thin-film transistors (OTFTs) for next-generation roll-to-roll organic electronics. Here, we investigate the solution-based fabrication of high-k aluminum oxide (Al2O3)
Lu Lyu et al.
Physical chemistry chemical physics : PCCP, 19(2), 1669-1676 (2016-12-21)
Combining ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), atomic force microscopy (AFM) and small angle X-ray diffraction (SAXD) measurements, we perform a systematic investigation on the correlations of the electronic structure, film growth and molecular orientation of 2,7-diocty[1]benzothieno[3,2-b]benzothiophene (C8-BTBT)
Ultrahigh Vacuum Self-Assembly of Rotationally Commensurate C8-BTBT/MoS2/Graphene Mixed-Dimensional Heterostructures.
Liu X, et al.
Chemistry of Materials, 23(4), 523-526 (2019)
Zhimin Chai et al.
Nanotechnology, 30(48), 485203-485203 (2019-08-31)
Achieving low-cost fabrication of organic field-effect transistors (OFETs) has long been pursued in the semiconductor industry. Solution-based process allows the fabrication of OFETs cost-effective because of its merit of vacuum-free and room temperature operation. Here, we show a facile and
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