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Safety Information

646687

Sigma-Aldrich

Silicon

wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Silicon element

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About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC Code:
12352300
PubChem Substance ID:
24883476
NACRES:
NA.23

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form

crystalline (cubic (a = 5.4037))
wafer (single side polished)

does not contain

dopant

diam. × thickness

2 in. × 0.5 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

semiconductor properties

<100>, N-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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1 of 4

This Item
647535647101647543
硅 wafer (single side polished), &#60;100&#62;, N-type, contains no dopant, diam. × thickness 2&#160;in. × 0.5&#160;mm

646687

硅

硅 wafer (single side polished), &#60;100&#62;, N-type, contains no dopant, diam. × thickness 3&#160;in. × 0.5&#160;mm

647535

硅

硅 wafer (single side polished), &#60;111&#62;, N-type, contains no dopant, diam. × thickness 2&#160;in. × 0.5&#160;mm

647101

硅

硅 wafer (single side polished), &#60;111&#62;, N-type, contains no dopant, diam. × thickness 3&#160;in. × 0.5&#160;mm

647543

硅

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

mp

1410 °C (lit.)

Quality Level

100

Quality Level

100

Quality Level

100

Quality Level

100

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

bp

2355 °C (lit.)

does not contain

dopant

does not contain

dopant

does not contain

dopant

does not contain

dopant

General description

Silicon wafers or a “slice” of substrate find applications in the fabrication of integrated circuits, solar cells etc. They serve as a substrate for various microelectronic devices.

Application

  • Innovative Solutions for High-Performance Silicon Anodes in Lithium-Ion Batteries: Overcoming Challenges and Real-World Applications.: This article addresses the challenges and real-world applications of high-performance silicon anodes in lithium-ion batteries, presenting innovative solutions to enhance their efficiency (Khan et al., 2024).
  • Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication.: This research focuses on strain engineering to improve the fabrication of freestanding perovskite oxides, which are crucial for various high-purity silicon applications in academia (Yun et al., 2024).

Physical properties

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 100 - 3000 Ωcm
Oxygen content: ≤ 1~1.8 x 1018 /cm3; Carbon content: ≤ 5 x 1016 /cm3; Boule diameter: 1~8 ″

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Information

新产品

    • Choose from one of the most recent versions:

    Certificates of Analysis (COA)

    Lot/Batch Number
    MKCW6935
    MKCT4983
    MKCT4982
    MKCT4980
    MKCT4978

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    Molecular monolayers on silicon surfaces.
    Lopinski GP and Wayner DDM.
    Material Matters, 3(2), 38-38 (2008)
    Chengyong Li et al.
    Journal of nanoscience and nanotechnology, 13(3), 2272-2275 (2013-06-13)
    Mesoporous Si-C-O fibers were fabricated by air activation of a kind of carbon-rich SiC-C fibers at 600 degrees C. The SiC-C fibers were prepared from the hybrid precursor of polycarbosilane and pitch through melt-spinning, air curing and pyrolysis in nitrogen.
    Bo-Soon Kim et al.
    Journal of nanoscience and nanotechnology, 13(5), 3622-3626 (2013-07-19)
    A subwavelength structure (SWS) was formed via a simple chemical wet etching using a gold (Au) catalyst. Single nano-sized Au particles were fabricated by metallic self-aggregation. The deposition and thermal annealing of the thin metallic film were carried out. Thermal
    Min Joon Huang et al.
    Journal of nanoscience and nanotechnology, 13(6), 3810-3817 (2013-07-19)
    In this work, we demonstrated a silicon nanowire (SiNW) biosensing platform capable of simultaneously identifying different Dengue serotypes on a single sensing chip. Four peptide nucleic acids (PNAs), specific to each Dengue serotypes (DENV-1 to DENV-4), were spotted on different
    Jae Cheol Shin et al.
    Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
    We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
    View All Related Papers

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    Protocols

    Negative Photoresist Procedure

    Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

    Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

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