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255475

Sigma-Aldrich

Boron nitride

powder, ~1 μm, 98%

Synonym(s):

Boron mononitride, Hexagonal boron nitride, White graphite

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About This Item

Linear Formula:
BN
CAS Number:
Molecular Weight:
24.82
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

98%

form

powder

particle size

~1 μm

density

2.29 g/mL at 25 °C (lit.)

SMILES string

B#N

InChI

1S/BN/c1-2

InChI key

PZNSFCLAULLKQX-UHFFFAOYSA-N

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General description

Hexagonal boron nitride (hBN) has a layered structure similar to graphite and can be exfoliated as singlelayered BN sheets. hBN has applications in catalysts, optoelectronics and semiconductor devices. Boron nitride posseses high thermal conductivity of approximately 400W/mK at 300K.

Application

Hexagonal boron nitride powder has been used:
  • In the fabrication and luminescence study of monolayered boron nitride quantum dots.
  • Rare earth boron complexes.
  • Boron nitride filled polybenzoxazine system as a thermally conducting molding components for electronic packaging applications.
  • Boron containing ceramic products.
  • As a starting material to form BN nanotubes.
  • To load silicone rubber and its consecutive effect on its thermal, mechanical and morphological properties was studied.

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Ki Kang Kim et al.
ACS nano, 6(10), 8583-8590 (2012-09-14)
Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed
Vibro-fluidization of fine boron nitride powder at low pressure Jeffrey R. Wank, et al., Powder technology
Wank JR, et al.
Powder Technology, 121, 195-204 (2001)
A solid-state process for formation of boron nitride nanotubes
Chen Y, et al.
Applied Physics Letters, 74(20) (1999)
A Erba et al.
The Journal of chemical physics, 138(5), 054906-054906 (2013-02-15)
The vibration spectrum of single-walled zigzag boron nitride (BN) nanotubes is simulated with an ab initio periodic quantum chemical method. The trend towards the hexagonal monolayer (h-BN) in the limit of large tube radius R is explored for a variety
Augustinus Stijn M Goossens et al.
Nano letters, 12(9), 4656-4660 (2012-08-22)
We report on the fabrication and measurement of nanoscale devices that permit electrostatic confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched between hexagonal boron nitride bottom and top gate dielectrics. Top gates are patterned such that

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