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  • Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application.

Progress in biophysics and molecular biology (2013-10-22)
A H Reshak, M M Shahimin, S Shaari, N Johan
ABSTRACT

The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light reflectance, enhancement of light trapping in the cell and increment of light absorption. The current work represent studies conducted in surface modification of single-crystalline silicon solar cells using wet chemical etching techniques. Two etching types are applied; alkaline etching (KOH:IPA:DI) and acidic etching (HF:HNO3:DI). The alkaline solution resulted in anisotropic profile that leads to the formation of inverted pyramids. While acidic solution formed circular craters along the front surface of silicon wafer. This surface modification will leads to the reduction of light reflectance via texturizing the surface and thereby increases the short circuit current and conversion rate of the solar cells.

MATERIALS
Product Number
Brand
Product Description

Sigma-Aldrich
Silicon, wafer (single side polished), <111>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, N-type, contains phosphorus as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <100>, P-type, contains boron as dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, wafer (single side polished), <111>, N-type, contains no dopant, diam. × thickness 3 in. × 0.5 mm
Sigma-Aldrich
Silicon, nanopowder, <100 nm particle size (TEM), ≥98% trace metals basis
Sigma-Aldrich
Silicon, pieces, 99.95% trace metals basis
Sigma-Aldrich
Silicon, powder, −325 mesh, 99% trace metals basis
Silicon, disks, 13mm, thickness 0.38mm, single crystal, 100%
Silicon, rod, 25mm, diameter 2.0mm, crystalline, 100%
Silicon, sheet, 10x10mm, thickness 0.6mm, single crystal, -100, 100%
Silicon, rod, 10mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 25mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, rod, 50mm, diameter 2.0mm, crystalline, 100%
Silicon, rod, 50mm, diameter 3.15mm, single crystal - random orientation, 100%
Silicon, rod, 80mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, sheet, 25x25mm, thickness 1.0mm, polycrystalline, 99.999%
Silicon, sheet, 14x14mm, thickness 1.0mm, single crystal, -111, 100%
Silicon, sheet, 25x25mm, thickness 1.0mm, single crystal, -100, 100%
Silicon, rod, 40mm, diameter 20mm, single crystal, -100, 99.999%
Silicon, rod, 50mm, diameter 5mm, single crystal, -100, 99.999%
Silicon, rod, 50mm, diameter 6mm, single crystal, -111, 99.999%
Silicon, sheet, 10x10mm, thickness 0.5mm, single crystal, -100, 100%
Sigma-Aldrich
Silicon, wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm
Silicon, disks, 15.9mm, thickness 0.38mm, single crystal, n-type, 100%