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Sigma-Aldrich

Tetramethylammonium hydroxide solution

25 wt. % in H2O

Synonym(s):

TMAH solution

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About This Item

Linear Formula:
(CH3)4N(OH)
CAS Number:
75-59-2
Molecular Weight:
91.15
Beilstein:
3558708
MDL number:
MFCD00008280
UNSPSC Code:
12352100
PubChem Substance ID:
24859984
NACRES:
NA.21

vapor pressure

17.5 mmHg ( 20 °C)

Quality Level

200

form

liquid

concentration

25 wt. % in H2O

refractive index

n20/D 1.3806

density

1.016 g/mL at 25 °C

SMILES string

[OH-].C[N+](C)(C)C

InChI

1S/C4H12N.H2O/c1-5(2,3)4;/h1-4H3;1H2/q+1;/p-1

InChI key

WGTYBPLFGIVFAS-UHFFFAOYSA-M

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General description

Tetramethylammonium hydroxide solution is commonly used as a strong base and nucleophilic source in organic synthesis reactions.

Application

Tetramethylammonium hydroxide is a quaternary ammonium salt generally used as an anisotropic etchant for silicon due to its high silicon etching rate.
Tetramethylammonium hydroxide solution (25 wt.% solution in water) may be used as a base for pH adjustment to obtain hexagonal mesoporous aluminophosphate (TAP).

Signal Word

Danger

Hazard Classifications

Acute Tox. 1 Dermal - Acute Tox. 2 Oral - Aquatic Chronic 2 - Eye Dam. 1 - Skin Corr. 1B - STOT RE 1 Dermal - STOT SE 1

Target Organs

Central nervous system, Liver,thymus

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Palladium-mediated carboxylation of aryl halides (triflates) or benzyl halides using [13 C]/[11 C] carbon monoxide with tetrabutylammonium hydroxide or trimethylphenylammonium hydroxide
Karimi F, et al.
Journal of the Chemical Society. Perkin Transactions 1, 20, 2256-2259 (2002)
Synthesis of mesoporous hexagonal titanium aluminophosphate molecular sieves and their catalytic applications
Kapoor MP & Raj A.
Applied Catalysis A: General, 203(2), 311-319 (2000)
Tetramethylammonium Hydroxide
Knight J
eEROS (Encyclopedia of Reagents for Organic Synthesis) (2001)
Study on anisotropic silicon etching characteristics in various surfactant-added tetramethyl ammonium hydroxide water solutions.
Yang CR, et al.
Journal of Micromechanics and Microengineering, 15(11), 2028-2028 (2005)
The characteristic behavior of TMAH water solution for anisotropic etching on both silicon substrate and SiO 2 layer.
Chen PH, et al.
Sensors and actuators A, Physical, 93(2), 132-137 (2001)
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