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description
Decomposition temperature: 371 °C (Decomposition start temperature)
mobility = 2.3 cm2 / Vs (@Vsd=100V)
on / off ratio = 107
Structure: BG-TC @ SiO2 / Si
electrode: Au
film: TU-3 / CHCl3 spin coat
Assay
≥99% (HPLC)
form
powder
mol wt
897.33 g/mol
color
dark green
mp
291 °C
storage temp.
2-8°C
Application
This material achieves a high electron mobility of 2.3 cm2/Vs or more in transistors, making it highly suitable for this application. The mobility of amorphous silicon used in general LCDs and other applications is about 0.5-1cm2/Vs.
Legal Information
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Regulatory Information
Certificates of Analysis (COA)
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Professors Tokito and Takeda share design principles and optimization protocols for organic electronic devices, focusing on flexibility and low cost.
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