901624
Buffered oxide etchant (BOE) 6:1
liquid
Synonym(s):
BHF, Buffered HF
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About This Item
UNSPSC Code:
12161700
NACRES:
NA.23
Related Categories
Application
Buffered oxide etchant (BOE) 6:1 can be used in the oxide removal of AlGaN/GaN-based high electron mobility transistors for gate photolithography. It can be used in a buffer oxide etchant method for the fabrication of micro biochip.
General description
BOE 6:1 is 6 parts by volume 40% ammonium fluoride and 1 part by volume 49% HF.
Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.
signalword
Danger
hcodes
Hazard Classifications
Acute Tox. 1 Dermal - Acute Tox. 2 Oral - Acute Tox. 3 Inhalation - Eye Dam. 1 - Skin Corr. 1A
Storage Class
6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
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Effect of passivation on AlGaN/GaN HEMT device performance
2000 IEEE international symposium on compound semiconductors, 357-363 (2000)
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy
Gonzalez-Posada F, et al.
Applied Surface Science, 253(14), 6185-6190 (2007)
Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology
Byun I, et al.
Microelectronics Journal, 39(5), 717-722 (2008)
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