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900569

Sigma-Aldrich

High speed bright copper electroplating solution

semiconductor grade

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Synonym(s):
Fast Copper Electroplating Solution
UNSPSC Code:
12352200
NACRES:
NA.23

grade

semiconductor grade

Quality Level

form

liquid

concentration

40 mg/L±4 mg/L chloride
600 mg/L±60 mg/L (organic additives)
65.0 g/L±2 g/L Cu
8.0 g/L±0.4 g/L H2SO4

General description

High speed bright copper electroplating solution is an electrolytic acid copper process engineered for plating copper bumps, pads, patterns and redistribution layers as well as filling vials and trenches on wide varieties of substrates including semiconductors, glass, polymers et al. This copper electroplating solution is made up of cupric sulphate and sulphuric acid with small additions of hydrochloric acid and organic additives. The organic additives have a wide concentration process window eliminating the need for separate additive solutions and replenishment for about 120 Amp-hours of electroplating.

Application


  • Promotion of High-Speed Copper-Filling Performance for Interconnections with Increasing Aspect-Ratio Using Compound Additives.: This study presents advancements in high-speed copper electroplating technologies, focusing on the application of compound additives to enhance copper-filling performance for microelectronic interconnections. The research demonstrates significant improvements in deposition rates and uniformity, essential for manufacturing high-performance energy storage systems and batteries. This aligns with industrial and academic interests in developing more efficient and eco-friendly copper plating processes for electronic components (Wang Q et al., 2022).

Features and Benefits

  • The use of single electroplating solution containing plating additives.
  • Stable additives with large process window.
  • High purity electrolyte and long shelf life.
  • High cloud point (>80 °C) and low foaming.
  • Low surface tension plating bath (∼44 dyne/cm @ 25 °C).
  • High speed plating (Up to 5 μm/min).
  • Uniform and flat bumps, pads, patterns and redistributions layers.
  • Void free filling of vials and trenches.

Quality

Deposits characteristics:
  • Density of 8.9 g/cm3.
  • Electrical resistivity of 1.7–1.8 μΩ cm.
  • Stress <50 MPa.
  • High in-film purity (<10 ppm for N, S, C, O, Cl).
  • Low surface roughness, RMS <10 nm @ 1 μm thick Cu.
  • Planarization of trenches (no recess in 1 μm wide x 0.5 μm deep trenches with 0.8 μm thick Cu).
  • Strong (111) texture with small (220) and (200).
  • Reflectivity >75%.
  • Elongation of 19–32%.

Signal Word

Warning

Hazard Statements

Hazard Classifications

Acute Tox. 4 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - Eye Irrit. 2 - Met. Corr. 1 - Skin Irrit. 2

WGK

WGK 3


Certificates of Analysis (COA)

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