form
solid
mp
>300 °C
λmax
627 nm (thin film)
orbital energy
1.83 eV (opt), HOMO 5.4 eV , LUMO 3.75 eV
P-typeOFET device performance
MobilityP-type
OPV device performance
ITO/PEDOT:PSS/ PBDTTPD:fullerene (1:1.5 by weight)/Ca/AlAdv. Energy Mater. 2012, 3, 220
storage temp.
2-8°C
General description
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