Select a Size
About This Item
InChI
1S/C27H25N3/c1-28-25-15-9-10-16-26(25)29(2)27(28)21-17-19-24(20-18-21)30(22-11-5-3-6-12-22)23-13-7-4-8-14-23/h3-20,27H,1-2H3
SMILES string
CN1C(N(C)c2ccccc12)c3ccc(cc3)N(c4ccccc4)c5ccccc5
InChI key
YUDZJTFIRBVGFN-UHFFFAOYSA-N
assay
98%
form
powder or crystals
mp
145-150 °C
λmax
308 nm in dichloromethane
Application
- Used as an n-type dopant for C60 fullerene which is an n-type semiconductor in organic and printed electronics.
- Used as an air-stable n-type dopant in solution processed n-channel organic thin film transistors (OTFTs).
Features and Benefits
- High degree of stability under ambient conditions.
- Forms transparent and homogeneous film in TFTs.
signalword
Warning
hcodes
pcodes
Hazard Classifications
Acute Tox. 4 Oral
Storage Class
11 - Combustible Solids
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Articles
Solution-processed organic photovoltaic devices (OPVs) have emerged as a promising clean energy generating technology due to their ease of fabrication, potential to enable low-cost manufacturing via printing or coating techniques, and ability to be incorporated onto light weight, flexible substrates.
Thin, lightweight, and flexible electronic devices meet widespread demand for scalable, portable, and robust technology.
Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service