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760463

Sigma-Aldrich

Hafnium(IV) tert-butoxide

packaged for use in deposition systems

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Synonym(s):
Hafnium tetra-t -butoxide, Hafnium tetrakis(t -butoxide), Tetra-t -butoxyhafnium, Tetrakis(t -butoxy)hafnium
Linear Formula:
Hf[OC(CH3)3]4
CAS Number:
2172-02-3
Molecular Weight:
470.94
MDL number:
MFCD00070458
UNSPSC Code:
12352103
PubChem Substance ID:
329766868
NACRES:
NA.23

form

liquid

reaction suitability

core: hafnium

refractive index

n20/D 1.424 (lit.)

bp

90 °C/5 mmHg (lit.)

density

1.166 g/mL at 25 °C (lit.)

SMILES string

CC(C)(C)O[Hf](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C

InChI

1S/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4

InChI key

WZVIPWQGBBCHJP-UHFFFAOYSA-N

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Application

Hafnium tert-butoxide [Hf(OtBu)4] is a mononuclear; volatile; and highly promising precursor for the deposition of HfO2 and other hafnium doped thin films by vapor deposition techniques. The deposited films show high dielectric constant suitable for semiconductor devices.

Pictograms

FlameExclamation mark
GHS02,GHS07

Signal Word

Warning

Hazard Statements

H226,H315,H319,H335

Hazard Classifications

Eye Irrit. 2 - Flam. Liq. 3 - Skin Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

WGK

WGK 3

Flash Point(F)

closed cup

Flash Point(C)

closed cup

Regulatory Information

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Williams, P. A.; et al
Journal of Materials Chemistry, 12, 165-165 (2002)
Dabrian, A.; et al.
Crystal Growth & Design, 11, 203-203 (2011)
Sean W Depner et al.
ACS nano, 8(5), 4678-4688 (2014-04-23)
We demonstrate that the degree of branching of the alkyl (R) chain in a Hf(OR)4 precursor allows for control over the length of HfO2 nanocrystals grown by homocondensation of the metal alkoxide with a metal halide. An extended nonhydrolytic sol-gel

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