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Merck
CN

756393

Aluminum nitride

powder, -200 mesh, 99.8% trace metals basis

Synonym(s):

Aluminum mononitride

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About This Item

Linear Formula:
AlN
CAS Number:
24304-00-5
Molecular Weight:
40.99
NACRES:
NA.23
PubChem Substance ID:
329766539
UNSPSC Code:
12352300
EC Number:
246-140-8
MDL number:
MFCD00003429

Key Documents

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InChI key

PIGFYZPCRLYGLF-UHFFFAOYSA-N

InChI

1S/Al.N

SMILES string

N#[Al]

assay

99.8% trace metals basis

form

powder

particle size

-200 mesh

mp

>2200 °C (lit.)

density

3.26 g/mL at 25 °C (lit.)

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Application

Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices.

pictograms

Health hazardEnvironment
GHS08,GHS09

signalword

Danger

hcodes

H372,H410

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

target_organs

Lungs

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

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Certificates of Analysis (COA)

Lot/Batch Number
MKCT7109
MKBK0051V
MKBK0051

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Fang, X.; et al.
Journal of Materials Chemistry, 18, 509-509 (2008)
Ambacher, O.
Journal of Physics D: Applied Physics, 31, 2653-2653 (1998)
Strite, S.; Morkoc, H.
J. Vac. Sci. Technol. B, 10, 1237-1237 (1992)
Yong-Bing Tang et al.
ACS nano, 5(5), 3591-3598 (2011-04-13)
Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical vapor deposition. The Mg-doped AlN NWs are single-crystalline and grow along the [001] direction. Gate-voltage-dependent
Lixia Qin et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(4), 045801-045801 (2012-12-19)
The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated using HSE06 range-separated hybrid functionals. Our results exhibit interesting behavior. (i) AlN and GaN share the
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