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Sigma-Aldrich

Bismuth selenide

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granular (melted), ≥99.995% trace metals basis

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Synonym(s):
Dibismuth triselenide
Empirical Formula (Hill Notation):
Bi2Se3
CAS Number:
12068-69-8
Molecular Weight:
654.84
EC Number:
235-104-7
MDL number:
MFCD00014200
UNSPSC Code:
12352300
PubChem Substance ID:
329764823
NACRES:
NA.23

Quality Level

100

Assay

≥99.995% trace metals basis

form

granular (melted)

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

mp

710 °C (lit.)

greener alternative category

, Enabling

SMILES string

[Se]=[Bi][Se][Bi]=[Se]

InChI

1S/2Bi.3Se

InChI key

OMEPJWROJCQMMU-UHFFFAOYSA-N

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General description

Bismuth selenide (Bi2Se3), a thermoelectric material that acts as a topological insulator, exhibits helical spin polarization and strong spin-orbit coupling.
Bismuth selenide is a semiconductor thermoelectric material.
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Application

Bi2Se3 can be used in the formation of nanocomposites for antitumor thermo-chemotherapy and imaging. It can also be used in the fabrication of electronic devices such as field effect transistors (FETs) and photodetectors.

Signal Word

Danger

Hazard Statements

H301 + H331,H373,H410

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 2

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Certificates of Analysis (COA)

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Multifunctional bismuth selenide nanocomposites for antitumor thermo-chemotherapy and imaging
Li Z, et al.
ACS Nano, 10(1), 984-997 (2016)
Observation of inverse spin Hall effect in bismuth selenide
Deorani P, et al.
Physical Review. B, Condensed Matter and Materials Physics, 90(9), 094403-094403 (2014)
Insulating behavior in ultrathin bismuth selenide field effect transistors
Cho S, et al.
Nano Letters, 11(5), 1925-1927 (2011)
Topological insulators: Oscillations in the ribbons.
Thomas Ihn
Nature materials, 9(3), 187-188 (2010-02-20)
Sabo, Ye. P.
Journal of Thermoelectricity, 1, 55-55 (2004)
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