Skip to Content
Merck
CN
All Photos(3)

Documents

Safety Information

725471

Sigma-Aldrich

Bis(methyl-η5−cyclopentadienyl)methoxymethylzirconium

packaged for use in deposition systems

Synonym(s):

ZRCMMM, ZrD-CO4

Sign Into View Organizational & Contract Pricing


About This Item

Linear Formula:
Zr(CH3C5H4)2CH3OCH3
Molecular Weight:
295.53
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

form

liquid

reaction suitability

core: zirconium

color

colorless

bp

110 °C/0.5 mmHg (lit.)

density

1.27 g/mL±0.01 g/mL at 25 °C (lit.)

SMILES string

C[C]1[C][C][C][C]1.C[C]2[C][C][C][C]2.C[Zr]OC

InChI

1S/2C6H7.CH3O.CH3.Zr/c2*1-6-4-2-3-5-6;1-2;;/h2*2-5H,1H3;1H3;1H3;/q;;-1;;+1

InChI key

LFGIFPGCOXPKMG-UHFFFAOYSA-N

General description

Atomic number of base material: 40 Zirconium

Application

Advanced precursor for atomic layer deposition of ZrO2 thin films. Hafnium and zirconium oxides are leading candidates to replace silicion dioxide as the gate oxide in a variety of semiconductor and energy applications. Excellent properties of HfO2 and ZrO2 films make them especially attractive for gate oxide replacement and as potential insulating dielectrics for capacitive elements in memory devices such as DRAM.

Features and Benefits

Compatible with a variety of oxidants in ALD growth processes across a wide temperature range exhibiting self limiting growth up to 400 °C. Precursor volatility and thermal stability properties enable easy materials transport from bubblers into conventional deposition tools.

Packaging

Packaged in stainless steel cylinders compatible with conventional deposition systems. Precursors may be used in liquid injection systems as dilute solutions and in combination with a variety of other sources to deposit mixed oxides.

Pictograms

Exclamation mark

Signal Word

Warning

Hazard Statements

Precautionary Statements

Hazard Classifications

Acute Tox. 4 Oral - Eye Irrit. 2 - Skin Irrit. 2

WGK

WGK 3

Flash Point(F)

226.4 °F

Flash Point(C)

108 °C

Regulatory Information

新产品

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

  1. Which document(s) contains shelf-life or expiration date information for a given product?

    If available for a given product, the recommended re-test date or the expiration date can be found on the Certificate of Analysis.

  2. How do I get lot-specific information or a Certificate of Analysis?

    The lot specific COA document can be found by entering the lot number above under the "Documents" section.

  3. How do I find price and availability?

    There are several ways to find pricing and availability for our products. Once you log onto our website, you will find the price and availability displayed on the product detail page. You can contact any of our Customer Sales and Service offices to receive a quote.  USA customers:  1-800-325-3010 or view local office numbers.

  4. What is the Department of Transportation shipping information for this product?

    Transportation information can be found in Section 14 of the product's (M)SDS.To access the shipping information for this material, use the link on the product detail page for the product. 

  5. Can the empty deposition cylinders be refilled?

    Yes, we are able to refill these cylinders through our SAFC Hitech group.  Please contact our Technical Service department by email at techserv@sial.com, and they will forward you to the appropriate SAFC Hitech representative for a quote.

  6. My question is not addressed here, how can I contact Technical Service for assistance?

    Ask a Scientist here.

J. W. Elama
Applied Physics Letters, 91, 253123-253123 (2007)
High-k gate dielectrics: current status and material properties considerations
Wilk, G.D.; Wallace, R.M.; Anthony, J.M.
Journal of Applied Physics, 89, 5243-5243 (2001)
Gutsche, M.; Seidl, H.; Luetzen J.; Birner, A.;
International Electron Devices Meeting, 18-18 (2001)

Articles

Atomic Layer Deposition (ALD) technology ensures uniform coating on complex 3D surfaces with precise chemisorption cycles.

Nanocomposite Coatings with Tunable Properties Prepared by Atomic Layer Deposition

High Purity Metalorganic Precursors for CPV Device Fabrication

The properties of many devices are limited by the intrinsic properties of the materials that compose them.

See All

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service