667528
Copper etchant
Synonym(s):
Copper etching solution
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About This Item
vapor density
1.3 (vs air)
Quality Level
Related Categories
Application
CE-200 solution can be used to etch out the copper residue or foil from the chemical vapor deposited (CVD) graphene or carbonated films by immersing the substrate with the nanomaterial into the etchant solution for 30 min.
It is ideal for spray etching of copper. Ferric chloride based Cu etchant with etch rate of 0.5 mil/min @ 40 °C.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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Copper etching with cupric chloride and regeneration of waste etchant
Journal of Materials Processing Technology, 175(1-3), 63-68 (2006)
The effect of copper pre-cleaning on graphene synthesis
Nanotechnology, 24(36), 365602-365602 (2013)
Microbial colonisation of transparent glass-like carbon films triggered by a reversible radiation-induced hydrophobic to hydrophilic transition
Royal Society of Chemistry Advances, 6(55), 50278-50287 (2016)
Enhanced performance of organic light-emitting diodes by using hybrid anodes composed of graphene and conducting polymer
Current Applied Physics, 13(36), S144-S147 (2013)
Controlled synthesis of nanocrystalline glass-like carbon thin films with tuneable electrical and optical properties
Chemical Engineering Journal, 299(1-3), 8-14 (2016)
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