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General description
Tantalum nitride etchant is a high purity etchant systems for precise, clean etching of tantalum, tantalum nitride, and tantalum oxide thin films and resists in electronics applications.
Application
Etchant solution for precise, clean etching of tantalum, tantalum nitride, and tantalum oxide thin films and resists in electronics applications
Features and Benefits
Etch rate 70-80 Å / sec @ 25 C. Use with gold positive or negative photoresist. Rinse with Deionized water.
Preparation Note
- Etch times vary depending on material type (Ta, TaN, or Ta2O5) and purity.
- Dilute with water or lower the temperature to achieve a lower etch rate. Adding 1 part water to 2 parts etchant or reducing the temperature 10 °C will approximately reduce the etch rate by 50%.
- Parts to be etched should be placed in etchant solution with mild to moderate mechanical agitation.
- Tantalum Etchants contain hydrofluoric acid and will attack silicon oxides, titanium, nickel, aluminum, and chromium.
- Gold would be the ideal etch stop. You might also succeed with tungsten
- Rinse with Deionized water.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 1 Dermal - Acute Tox. 2 Oral - Acute Tox. 3 Inhalation - Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1A
Supplementary Hazards
WGK
WGK 2
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Information
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