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Merck
CN

651486

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monoarsenide

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About This Item

Linear Formula:
GaAs
CAS Number:
1303-00-0
Molecular Weight:
144.64
NACRES:
NA.23
PubChem Substance ID:
24883832
UNSPSC Code:
12352300
EC Number:
215-114-8
MDL number:
MFCD00011017

Key Documents

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Product Name

Gallium arsenide, (single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

InChI

1S/As.Ga

SMILES string

[Ga]#[As]

form

(single crystal substrate)

resistivity

≥1E7 Ω-cm

diam. × thickness

2 in. × 0.5 mm

density

5.31 g/mL at 25 °C (lit.)

semiconductor properties

<100>

Quality Level

100

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General description

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Physical form

cubic (a = 5.6533 Å)

pictograms

Health hazard
GHS08

signalword

Danger

Hazard Classifications

Carc. 1B - Repr. 1B - STOT RE 1

target_organs

Respiratory system,hematopoietic system

Storage Class

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

Regulatory Information

危险化学品
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Certificates of Analysis (COA)

Lot/Batch Number
MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
[A matrix gallium-arsenide detector for roentgenoraphy].
A P Vorob'ev et al.
Meditsinskaia tekhnika, (5)(5), 21-26 (2012-11-20)
Yu Bomze et al.
Physical review letters, 109(2), 026801-026801 (2012-10-04)
We report on measurements of first-passage-time distributions associated with current switching in weakly coupled GaAs/AlAs superlattices driven by shot noise, a system that is both far from equilibrium and high dimensional. Static current-voltage (I-V) characteristics exhibit multiple current branches and
Chan Il Yeo et al.
Optics express, 20(17), 19554-19562 (2012-10-06)
We present a simple, cost-effective, large scale fabrication technique for antireflective disordered subwavelength structures (d-SWSs) on GaAs substrate by Ag etch masks formed using spin-coated Ag ink and subsequent inductively coupled plasma (ICP) etching process. The antireflection characteristics of GaAs
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