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Merck
CN

651486

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Synonym(s):

Gallium monoarsenide

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About This Item

Linear Formula:
GaAs
CAS Number:
1303-00-0
Molecular Weight:
144.64
NACRES:
NA.23
PubChem Substance ID:
24883832
UNSPSC Code:
12352300
EC Number:
215-114-8
MDL number:
MFCD00011017

Key Documents

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InChI key

JBRZTFJDHDCESZ-UHFFFAOYSA-N

InChI

1S/As.Ga

SMILES string

[Ga]#[As]

form

(single crystal substrate)

resistivity

≥1E7 Ω-cm

diam. × thickness

2 in. × 0.5 mm

density

5.31 g/mL at 25 °C (lit.)

semiconductor properties

<100>

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General description

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Physical form

cubic (a = 5.6533 Å)

pictograms

Health hazard
GHS08

signalword

Danger

Hazard Classifications

Carc. 1B - Repr. 1B - STOT RE 1

target_organs

Respiratory system,hematopoietic system

Storage Class

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

Regulatory Information

危险化学品
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Certificates of Analysis (COA)

Lot/Batch Number
MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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Eli Fahrenkrug et al.
Journal of the American Chemical Society, 135(1), 330-339 (2012-12-26)
Crystalline GaAs (c-GaAs) has been prepared directly through electroreduction of As(2)O(3) dissolved in an alkaline aqueous solution at a liquid gallium (Ga(l)) electrode at modest temperatures (T ≥ 80 °C). Ga(l) pool electrodes yielded consistent electrochemical behavior, affording repetitive measurements
Andrew Lee et al.
Optics express, 20(20), 22181-22187 (2012-10-06)
We report the first room-temperature continuous-wave operation of III-V quantum-dot laser diodes monolithically grown on a Si substrate. Long-wavelength InAs/GaAs quantum-dot structures were fabricated on Ge-on-Si substrates. Room-temperature lasing at a wavelength of 1.28 μm has been achieved with threshold
Yuttapoom Puttisong et al.
Advanced materials (Deerfield Beach, Fla.), 25(5), 738-742 (2012-10-31)
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for
Brandon J Beberwyck et al.
Journal of the American Chemical Society, 134(49), 19977-19980 (2012-11-30)
III-V nanocrystals displaying high crystallinity and low size dispersity are difficult to access by direct synthesis from molecular precursors. Here, we demonstrate that cation exchange of cadmium pnictide nanocrystals with group 13 ions yields monodisperse, crystalline III-V nanocrystals, including GaAs
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
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