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Merck
CN

554073

Rubrene

≥98%

Synonym(s):

5,6,11,12-Tetraphenylnaphthacene

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About This Item

Empirical Formula (Hill Notation):
C42H28
CAS Number:
517-51-1
Molecular Weight:
532.67
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
24879373
EC Number:
208-242-0
Beilstein/REAXYS Number:
1917339
MDL number:
MFCD00003703

Key Documents

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Product Name

Rubrene, ≥98%

InChI key

YYMBJDOZVAITBP-UHFFFAOYSA-N

InChI

1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H

SMILES string

c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25

assay

≥98%

mp

330-335 °C (lit.)

λmax

299 nm
460 nm (2nd)

Quality Level

100

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Application

Reagent for chemiluminescence research and for transition metal complex ligation.
Rubrene based thin films are used as semiconducting layers along with poly(vinylidene fluoride-terefluoroethylene) (PVDF-TeFE) as insulating layers for the fabrication of ferro-electric gate field effect transistors (FETs). It may also be used as high mobility transporting material in the development of single crystal FETs.

General description

Rubrene is a tetraphenyl derivative of tetracene that is used as an organic semiconductor. It is used as a source material in the fabrication of rubrene single crystal based transistors with carrier mobility over 10 cm2V−1s−1.

Storage Class

11 - Combustible Solids

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type N95 (US)

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Certificates of Analysis (COA)

Lot/Batch Number
SHBR3464
SHBN4035
MKCK0995
MKCH3491
MKBP3965V

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Intrinsic charge transport on the surface of organic semiconductors
Podzorov V, et al.
Physical Review Letters, 93(8), 086602-086602 (2004)
Organic ferroelectric gate field-effect transistor memory using high-mobility rubrene thin film
Kanashima T, et al.
Japanese Journal of Applied Physics, 53(4S), 04ED11-04ED11 (2014)
High performance of rubrene thin film transistor by weak epitaxy growth method
Chang H, et al.
Organic Electronics, 20, 43-48 (2015)
Field-effect transistors on rubrene single crystals with parylene gate insulator
Podzorov V, et al.
Applied Physics Letters, 82(11), 1739-1741 (2003)
Influence of the gate dielectric on the mobility of rubrene single-crystal field-effect transistors
Stassen AF, et al.
Applied Physics Letters, 85(17), 3899-3901 (2004)
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