Select a Size
About This Item
Product Name
Tetramethylsilane, electronic grade, ≥99.99% trace metals basis
InChI
1S/C4H12Si/c1-5(2,3)4/h1-4H3
InChI key
CZDYPVPMEAXLPK-UHFFFAOYSA-N
SMILES string
C[Si](C)(C)C
grade
electronic grade
vapor pressure
11.66 psi ( 20 °C)
assay
≥99.99% trace metals basis
form
liquid
autoignition temp.
842 °F
refractive index
n20/D 1.358 (lit.)
bp
26-28 °C (lit.)
mp
−99 °C (lit.)
density
0.648 g/mL at 25 °C (lit.)
storage temp.
2-8°C
Quality Level
Looking for similar products? Visit Product Comparison Guide
General description
Choose from one of the most recent versions:
Already Own This Product?
Find documentation for the products that you have recently purchased in the Document Library.
Articles
High Purity Metalorganic Precursors for CPV Device Fabrication
atomic layer deposition (ALD), microelectronics, Mo:Al2O3 films, nanocomposite coating, photovoltaics, semiconductor devices, W:Al2O3 films, composite films, layer-by-layer
Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes
Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.
Contact Technical Service