Skip to Content
Merck
CN
All Photos(1)

Key Documents

Safety Information

521574

Sigma-Aldrich

Gallium phosphide

99.99% trace metals basis

Sign Into View Organizational & Contract Pricing


About This Item

Linear Formula:
GaP
CAS Number:
Molecular Weight:
100.70
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23

Assay

99.99% trace metals basis

form

chunks

SMILES string

[P]#[Ga]

InChI

1S/Ga.P

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Pictograms

Exclamation mark

Signal Word

Warning

Hazard Statements

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Information

新产品

Choose from one of the most recent versions:

Certificates of Analysis (COA)

Lot/Batch Number

Don't see the Right Version?

If you require a particular version, you can look up a specific certificate by the Lot or Batch number.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Jianwei Sun et al.
Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Colloidal GaP nanowires (NWs) were synthesized on a large scale by a surfactant-free, self-seeded solution-liquid-solid (SLS) method using triethylgallium and tris(trimethylsilyl)phosphine as precursors and a noncoordinating squalane solvent. Ga nanoscale droplets were generated in situ by thermal decomposition of the
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Mohammad Montazeri et al.
Nano letters, 10(3), 880-886 (2010-02-06)
Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by
Dion McIntosh et al.
Optics express, 19(20), 19607-19612 (2011-10-15)
Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) are reported. The APDs exhibited dark current less than a pico-ampere at unity gain. A quantum efficiency of 70% was achieved with a recessed window structure; this is almost two times higher than
Kelley Rivoire et al.
Optics express, 17(25), 22609-22615 (2010-01-07)
We demonstrate second harmonic generation in photonic crystal nanocavities fabricated in the semiconductor gallium phosphide. We observe second harmonic radiation at 750 nm with input powers of only nanowatts coupled to the cavity and conversion effciency P(out)/P(2)(in,coupled)=430%/W. The large electronic

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service