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481769

Sigma-Aldrich

Gallium nitride

99.9% trace metals basis

Synonym(s):

Gallium mononitride, Gallium mononitride (GaN)

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100 ML
¥428.39

¥428.39

List price¥680.16Save 37%

Available to ship on2025年4月10日Details

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100 ML
¥428.39

About This Item

Linear Formula:
GaN
CAS Number:
25617-97-4
Molecular Weight:
83.73
EC Number:
247-129-0
MDL number:
MFCD00016108
UNSPSC Code:
12352300
PubChem Substance ID:
24871779
NACRES:
NA.23

¥428.39

List price¥680.16Save 37%

Available to ship on2025年4月10日Details

Request a Bulk Order

Assay

99.9% trace metals basis

form

powder

mp

800 °C (lit.)

SMILES string

N#[Ga]

InChI

1S/Ga.N

InChI key

JMASRVWKEDWRBT-UHFFFAOYSA-N

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This Item
E78891507112854
乙二胺四乙酸 二钠盐 溶液 BioUltra, for molecular biology, pH 8.0, ~0.5 M in H2O

03690

乙二胺四乙酸 二钠盐 溶液

乙二胺四乙酸 二钠盐 溶液 for molecular biology, 0.5 M in H2O, DNase, RNase, NICKase and protease, none detected

E7889

乙二胺四乙酸 二钠盐 溶液

Titriplex® III 溶液 0.1 M, for 3S Adapter technology, set incl. Absorber cartridge with soda lime, for 3S adapter technology

150711

Titriplex® III 溶液

乙二胺四乙酸 二钠盐 溶液 2%, solution

2854

乙二胺四乙酸 二钠盐 溶液

Quality Level

200

Quality Level

300

Quality Level

-

Quality Level

200

product line

BioUltra

product line

-

product line

-

product line

-

impurities

DNases, none detected, insoluble matter, passes filter test, proteases, none detected, RNases, none detected, phosphatases, none detected

impurities

-

impurities

-

impurities

-

form

liquid

form

liquid

form

liquid

form

solution

pH

8.0±0.2

pH

7.5-8.5

pH

-

pH

-

Application

Gallium nitride (GaN) is a wide band gap semiconducting material,[1] which can be used in the development of a variety of electronic devices, such as light emitting diodes (LEDs),[2] and field effect transistors (FETs).[3] It can also be used as a transition metal dopant for spintronics-based applications.[4]

Pictograms

Exclamation mark
GHS07

Signal Word

Warning

Hazard Statements

H317

Hazard Classifications

Skin Sens. 1

Storage Class Code

11 - Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves
  • Specification Sheet

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    Lot/Batch Number
    0000314827
    0000314827
    0000237871
    0000225639
    0000196200

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    Gallium nitride nanowire nanodevices
    Huang Y, et al.
    Nano Letters, 2(2), 101-104 (2002)
    Gallium nitride as an electromechanical material
    Rais-Zadeh M, et al.
    Journal of Microelectromechanical Systems : A Joint IEEE and ASME Publication on Microstructures, Microactuators, Microsensors, and Microsystems, 23(6), 1252-1271 (2014)
    Fabrizio Gaulandris et al.
    Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada, 26(1), 3-17 (2020-01-21)
    One of the biggest challenges for in situ heating transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) is the ability to measure the local temperature of the specimen accurately. Despite technological improvements in the construction of TEM/STEM heating
    Sanjay Sankaranarayanan et al.
    ACS omega, 4(12), 14772-14779 (2019-09-26)
    Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy
    High-brightness light emitting diodes using dislocation-free indium gallium nitride/gallium nitride multiquantum-well nanorod arrays
    Kim H, et al.
    Nano Letters, 4(6), 1059-1062 (2004)
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