435848
Indium(III) fluoride
≥99.9% trace metals basis
Synonym(s):
Trifluoroindigane
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About This Item
Linear Formula:
InF3
CAS Number:
Molecular Weight:
171.81
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23
Quality Level
Assay
≥99.9% trace metals basis
form
powder
reaction suitability
reagent type: catalyst
core: indium
impurities
≤1000.0 ppm Trace Metal Analysis
SMILES string
F[In](F)F
InChI
1S/3FH.In/h3*1H;/q;;;+3/p-3
InChI key
JNLSTWIBJFIVHZ-UHFFFAOYSA-K
Related Categories
General description
Indium(III) fluoride is a white crystalline solid with a relatively high melting point. It is a wide band gap semiconductor suitable for optoelectronic applications. Non-oxide glasses are made using indium(III) fluoride.
Application
Indium(III) fluoride can be used:
- As a precursor to prepare indium oxide thin films for various applications.
- To fabricate Pr3+/Er3+ co-doped glasses for white light emission.
- For surface fluorination treatment of Indium-based quantum dots to enhance their photoluminescence quantum yield.
- As an electrolyte additive for Li-metal batteries to enhance theircycling performance.
Signal Word
Warning
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Irrit. 2 - Skin Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Supplementary Hazards
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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Find documentation for the products that you have recently purchased in the Document Library.
White light emission and energy transfer in Pr3+/Er3+ co-doped InF3-based glass
Joanna Pisarska, et al.
Materials Research Bulletin, 150, 111791-111791 (2022)
Eur. J. Solid State Inorg. Chem., 33, 879-879 (1996)
Trap Passivation in Indium-Based Quantum Dots through Surface Fluorination: Mechanism and Applications
Tae-Gon Kim, et al.
ACS Nano, 12, 11529-11540 (2018)
Loh T-P. et al.
Synlett, 369-369 (1998)
Hexaaqua Metal Complexes for Low-Temperature Formation of Fully Metal Oxide Thin-Film Transistors
You Seung, et al.
Chemistry of Materials, 27, 5808-5812 (2015)
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