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40253

Sigma-Aldrich

Hydrochloric acid

semiconductor grade PURANAL™ (Honeywell 17823), fuming 37%, 37-38%

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Empirical Formula (Hill Notation):
HCl
CAS Number:
7647-01-0
Molecular Weight:
36.46
Beilstein:
1098214
EC Number:
231-595-7
MDL number:
MFCD00011324
UNSPSC Code:
12352300
PubChem Substance ID:
57649953

grade

semiconductor grade PURANAL™ (Honeywell 17823)

vapor density

1.3 (vs air)

vapor pressure

3.23 psi ( 21.1 °C)
7.93 psi ( 37.7 °C)

Assay

37-38%

CofA

specification on request

concentration

30-50%

color

light yellow

bp

>100 °C (lit.)

solubility

H2O: soluble

density

1.2 g/mL at 25 °C (lit.)

SMILES string

Cl

InChI

1S/ClH/h1H

InChI key

VEXZGXHMUGYJMC-UHFFFAOYSA-N

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General description

Semiconductor grade hydrochloric acid has been characterized by inductively couple plasma mass spectrometry (ICP-MS). The trace detection of V, Cr, As and Se in 20% HCl was determined in the study. It′s efficiency as a microabrasive was studied.

Application

Hydrochloric acid may be used in the formulation of “standard cleaning bath” to purify metallurgical grade silicon (MGS) and polysilicon. Varying concentrations of the acid aided formation of spherical and rod like cellulose nanocrystals. Aqueous mixture of hydrochloric acid and Α-hydroxy acids (lactic, citric, malic, and tartaric acids) may be used to etch a III-V semiconductor (InP).

Legal Information

PURANAL is a trademark of Honeywell Specialty Chemicals Seelze GmbH

Pictograms

CorrosionExclamation mark
GHS05,GHS07

Signal Word

Danger

Hazard Statements

H290,H314,H335

Hazard Classifications

Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B - STOT SE 3

Target Organs

Respiratory system

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Information

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Electrochemical properties of metallurgical-grade silicon in hydrochloric acid.
Kareh KA
Electrochimica Acta, 54(26), 6548-6553 (2009)
Analysis of semiconductor-grade HCl with the ELAN DRC ICP-MS: elimination of chloride-based interferences.
Kishi Y and Kawabata K
Atomic Spectroscopy, 23(5), 165-169 (2002)
Semiconductor Surface-Molecule Interactions, Wet etching of InP by ?-hydroxy acids
Bandaru P and Yablonovitch E
Journal of the Electrochemical Society, 149, G599-G602 (2002)
Soumya Sinha et al.
The European journal of esthetic dentistry : official journal of the European Academy of Esthetic Dentistry, 8(3), 454-465 (2013-08-21)
The aim of this study was to assess the efficacy of 18% hydrochloric acid and 37% phosphoric acid by an in vivo comparison. Sixty fluorotic permanent maxillary central incisors from 30 patients were divided into 3 categories. The teeth received
Brian W Simons et al.
The Journal of pathology, 235(3), 478-489 (2014-10-29)
Inflammation is associated with several diseases of the prostate including benign enlargement and cancer, but a causal relationship has not been established. Our objective was to characterize the prostate inflammatory microenvironment after infection with a human prostate-derived bacterial strain and
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