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About This Item
Empirical Formula (Hill Notation):
HCl
CAS Number:
Molecular Weight:
36.46
Beilstein:
1098214
EC Number:
MDL number:
UNSPSC Code:
12352301
PubChem Substance ID:
Recommended Products
vapor density
1.3 (vs air)
vapor pressure
3.23 psi ( 21.1 °C)
7.93 psi ( 37.7 °C)
Assay
37-38%
CofA
specification on request
concentration
30-50%
color
light yellow
bp
>100 °C (lit.)
solubility
H2O: soluble
density
1.18 g/L at 20 °C
SMILES string
Cl
InChI
1S/ClH/h1H
InChI key
VEXZGXHMUGYJMC-UHFFFAOYSA-N
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General description
Semiconductor grade hydrochloric acid has been characterized by inductively couple plasma mass spectrometry (ICP-MS). The trace detection of V, Cr, As and Se in 20% HCl was determined in the study. It′s efficiency as a microabrasive was studied.
Application
Hydrochloric acid may be used in the formulation of “standard cleaning bath” to purify metallurgical grade silicon (MGS) and polysilicon. Varying concentrations of the acid aided formation of spherical and rod like cellulose nanocrystals. Aqueous mixture of hydrochloric acid and Α-hydroxy acids (lactic, citric, malic, and tartaric acids) may be used to etch a III-V semiconductor (InP).
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
8B - Non-combustible corrosive hazardous materials
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Information
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Electrochemical properties of metallurgical-grade silicon in hydrochloric acid.
Kareh KA
Electrochimica Acta, 54(26), 6548-6553 (2009)
Analysis of semiconductor-grade HCl with the ELAN DRC ICP-MS: elimination of chloride-based interferences.
Kishi Y and Kawabata K
Atomic Spectroscopy, 23(5), 165-169 (2002)
Semiconductor Surface-Molecule Interactions, Wet etching of InP by ?-hydroxy acids
Bandaru P and Yablonovitch E
Journal of the Electrochemical Society, 149, G599-G602 (2002)
Charlotte Strandgren et al.
FASEB journal : official publication of the Federation of American Societies for Experimental Biology, 29(8), 3193-3205 (2015-04-17)
Hutchinson-Gilford progeria syndrome (HGPS) is a rare premature aging disorder that is most commonly caused by a de novo point mutation in exon 11 of the LMNA gene, c.1824C>T, which results in an increased production of a truncated form of
Soumya Sinha et al.
The European journal of esthetic dentistry : official journal of the European Academy of Esthetic Dentistry, 8(3), 454-465 (2013-08-21)
The aim of this study was to assess the efficacy of 18% hydrochloric acid and 37% phosphoric acid by an in vivo comparison. Sixty fluorotic permanent maxillary central incisors from 30 patients were divided into 3 categories. The teeth received
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