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40233

Sigma-Aldrich

Hydrochloric acid

semiconductor grade PURANAL™ (Honeywell 17863), ≥32%

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Synonym(s):
Hydrogen chloride (HCl)
Empirical Formula (Hill Notation):
HCl
CAS Number:
7647-01-0
Molecular Weight:
36.46
Beilstein:
1098214
MDL number:
MFCD00011324
UNSPSC Code:
12352300
PubChem Substance ID:
57649945

grade

semiconductor grade PURANAL™ (Honeywell 17863)

vapor density

1.3 (vs air)

vapor pressure

3.23 psi ( 21.1 °C)
7.93 psi ( 37.7 °C)

Assay

≥32%

CofA

specification on request

concentration

90-100%

color

clear light yellow

bp

>100 °C (lit.)

solubility

H2O: miscible (completely)

density

1.2 g/mL at 25 °C (lit.)

SMILES string

Cl

InChI

1S/ClH/h1H

InChI key

VEXZGXHMUGYJMC-UHFFFAOYSA-N

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General description

Semiconductor grade hydrochloric acid has been characterized by inductively couple plasma mass spectrometry (ICP-MS). The trace detection of V, Cr, As and Se in 20% HCl was determined in the study. Its efficiency as a microabrasive was studied.

Application

Hydrochloric acid may be used in the formulation of “standard cleaning bath” to purify metallurgical grade silicon (MGS) and polysilicon. Varying concentrations of the acid aided formation of spherical and rod like cellulose nanocrystals. Aqueous mixture of hydrochloric acid and Α-hydroxy acids (lactic, citric, malic, and tartaric acids) may be used to etch a III-V semiconductor (InP).

Legal Information

PURANAL is a trademark of Honeywell Specialty Chemicals Seelze GmbH

Pictograms

CorrosionExclamation mark
GHS05,GHS07

Signal Word

Danger

Hazard Statements

H290,H314,H335

Hazard Classifications

Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B - STOT SE 3

Target Organs

Respiratory system

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Information

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Analysis of semiconductor-grade HCl with the ELAN DRC ICP-MS: elimination of chloride-based interferences.
Kishi Y and Kawabata K
Atomic Spectroscopy, 23(5), 165-169 (2002)
Electrochemical properties of metallurgical-grade silicon in hydrochloric acid.
Kareh KA
Electrochimica Acta, 54(26), 6548-6553 (2009)
Semiconductor Surface-Molecule Interactions, Wet etching of InP by ?-hydroxy acids
Bandaru P and Yablonovitch E
Journal of the Electrochemical Society, 149, G599-G602 (2002)
Douglas M McMillan et al.
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