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339113

Sigma-Aldrich

Tantalum(V) ethoxide

99.98% trace metals basis

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Synonym(s):
Pentaethoxytantalum, Pentaethyl tantalate, Tantalum ethylate, Tantalum pentaethoxide, Tantalum(V) ethoxide
Linear Formula:
Ta(OC2H5)5
CAS Number:
6074-84-6
Molecular Weight:
406.25
Beilstein:
3678999
MDL number:
MFCD00049785
UNSPSC Code:
12352300
PubChem Substance ID:
24860612
NACRES:
NA.23

Quality Level

100

Assay

99.98% trace metals basis

form

liquid

reaction suitability

core: tantalum
reagent type: catalyst

impurities

<2 wt. % toluene

refractive index

n20/D 1.487 (lit.)

bp

155 °C/0.01 mmHg (lit.)

mp

21 °C (lit.)

density

1.566 g/mL at 25 °C (lit.)

SMILES string

CCO[Ta](OCC)(OCC)(OCC)OCC

InChI

1S/5C2H5O.Ta/c5*1-2-3;/h5*2H2,1H3;/q5*-1;+5

InChI key

HSXKFDGTKKAEHL-UHFFFAOYSA-N

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General description

Tantalum(V) ethoxide Ta(OC2H5)5 is a tantalum alkoxide that can be used as a precursor in the preparation of tantalum oxide by chemical vapor deposition (CVD). It has excellent volatility and thermal stability. It can be synthesized by anodic oxidation of tantalum plate in anhydrous ethanol.

Application

Ta(OC2H5)5 can be used in the formation of ultrathin tantalum oxide based capacitors. It can also be used as a liquid precursor in the preparation of tantalum carbide nanopowder for hard coating on metal surfaces.

Pictograms

Flame
GHS02

Signal Word

Warning

Hazard Statements

H226

Hazard Classifications

Flam. Liq. 3

WGK

WGK 1

Flash Point(F)

closed cup

Flash Point(C)

closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Regulatory Information

危险化学品

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The Electrosynthesis of Tantalum Ethoxide
Yang H, et al.
Electrochemistry, 82(9), 743-748 (2014)
Controlling the synthesis of TaC nanopowders by injecting liquid precursor into RF induction plasma
Ishigaki T, et al.
Science and Technology of Advanced Materials, 6(2), 111-111 (2005)
Leakage currents in amorphous Ta 2 O 5 thin films
Chiu F, et al.
Journal of Applied Physics, 81(10), 6911-6915 (1997)
Ultrathin tantalum oxide capacitor dielectric layers fabricated using rapid thermal nitridation prior to low pressure chemical vapor deposition
Kamiyama S, et al.
Journal of the Electrochemical Society, 140(6), 1617-1625 (1993)
I Boileau et al.
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Drug addiction has been associated with deficits in mesostriatal dopamine (DA) function, but whether this state extends to behavioral addictions such as pathological gambling (PG) is unclear. Here we used positron emission tomography and the D3 receptor-preferring radioligand [(11)C]-(+)-PHNO during
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