329010
Gallium arsenide
pieces, 99.999% trace metals basis
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About This Item
Linear Formula:
GaAs
CAS Number:
Molecular Weight:
144.64
UNSPSC Code:
12352300
PubChem Substance ID:
EC Number:
215-114-8
MDL number:
InChI key
JBRZTFJDHDCESZ-UHFFFAOYSA-N
InChI
1S/As.Ga
SMILES string
[Ga]#[As]
assay
99.999% trace metals basis
form
pieces
density
5.31 g/mL at 25 °C (lit.)
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signalword
Danger
hcodes
Hazard Classifications
Carc. 1B - Repr. 1B - STOT RE 1
target_organs
Respiratory system,hematopoietic system
Storage Class
6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials
wgk
WGK 3
flash_point_f
Not applicable
flash_point_c
Not applicable
Regulatory Information
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I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
M Baranowski et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(6), 065801-065801 (2013-01-12)
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not
V V Solovyev et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(2), 025801-025801 (2012-11-28)
Temperature-dependent reflectivity and photoluminescence spectra are studied for undoped ultra-wide 150 and 250 nm GaAs quantum wells. It is shown that spectral features previously attributed to a size quantization of the exciton motion in the z-direction coincide well with energies
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