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Merck
CN

326127

Indium(III) nitrate hydrate

99.99% trace metals basis

Synonym(s):

Indium trinitrate hydrate, Indium(3+) trinitrate hydrate

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About This Item

Linear Formula:
In(NO3)3 · xH2O
CAS Number:
207398-97-8
Molecular Weight:
300.83 (anhydrous basis)
NACRES:
NA.23
PubChem Substance ID:
24859563
UNSPSC Code:
12352302
EC Number:
237-393-5
MDL number:
MFCD00149742
Assay:
99.99% trace metals basis
Form:
powder and chunks

Key Documents

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Product Name

Indium(III) nitrate hydrate, 99.99% trace metals basis

InChI key

YZZFBYAKINKKFM-UHFFFAOYSA-N

InChI

1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;

SMILES string

[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O

assay

99.99% trace metals basis

form

powder and chunks

reaction suitability

core: indium
reagent type: catalyst

impurities

≤150.0 ppm Trace Metal Analysis

Quality Level

100

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Application

Indium(III) nitrate hydrate is used in the preparation of indium based substrates for the fabrication of semiconductor devices, such as thin film transistors.

General description

Indium(III) nitrate hydrate is an indium based precursor solution, which can be annealed at 500°C and spin coated to form indium oxide thin films.

pictograms

Flame over circleExclamation mark
GHS03,GHS07

signalword

Danger

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2

Storage Class

5.1B - Oxidizing hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges

Regulatory Information

危险化学品
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Certificates of Analysis (COA)

Lot/Batch Number
0000509010
0000509010
0000342716
0000342716
0000254280

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Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
William J Scheideler et al.
ACS applied materials & interfaces, 10(43), 37277-37286 (2018-10-10)
Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the

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