266809
Hafnium
turnings, crystal bar, 99.7% trace metals basis
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Synonym(s):
Celtium, Hafnium element
Empirical Formula (Hill Notation):
Hf
CAS Number:
Molecular Weight:
178.49
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
99.7% trace metals basis
form
turnings, crystal bar
resistivity
29.6 μΩ-cm, 0°C
bp
4602 °C (lit.)
mp
2227 °C (lit.)
density
13.3 g/cm3 (lit.)
SMILES string
[Hf]
InChI
1S/Hf
InChI key
VBJZVLUMGGDVMO-UHFFFAOYSA-N
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WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Regulatory Information
监管及禁止进口产品
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Christopher C Underwood et al.
Inorganic chemistry, 52(1), 237-244 (2012-12-19)
This paper describes the hydrothermal chemistry of alkali hafnium fluorides, including the synthesis and structural characterization of five new alkali hafnium fluorides. Two ternary alkali hafnium fluorides are described: Li(2)HfF(6) in space group P31m with a = 4.9748(7) Å and
Yu Gong et al.
Dalton transactions (Cambridge, England : 2003), 41(38), 11706-11715 (2012-08-18)
The isolated group 4 metal oxydifluoride molecules OMF(2) (M = Ti, Zr, Hf) with terminal oxo groups are produced specifically on the spontaneous reactions of metal atoms with OF(2) through annealing in solid argon. The product structures and vibrational spectra
Byung-Hak Moon et al.
Journal of nanoscience and nanotechnology, 11(8), 7428-7432 (2011-11-23)
In this study, we investigated the electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials. The Ti-35Ta-xHf alloys contained from 3 wt.% to 15 wt.% Hf were manufactured by arc melting furnace. The nanotube oxide layers were formed
Daqin Chen et al.
Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
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