All Photos(3)
Synonym(s):
Gallium trioxide
Empirical Formula (Hill Notation):
Ga2O3
CAS Number:
Molecular Weight:
187.44
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
≥99.99% trace metals basis
form
(crystalline powder)
reaction suitability
reagent type: catalyst
core: gallium
density
5.88 g/mL at 25 °C
SMILES string
O=[Ga]O[Ga]=O
InChI
1S/2Ga.3O
InChI key
QZQVBEXLDFYHSR-UHFFFAOYSA-N
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General description
Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.
Application
Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.
Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.
It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.
It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.
WGK
WGK 2
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Naoya Kumagai et al.
Chemical communications (Cambridge, England), 47(6), 1884-1886 (2010-12-07)
Using the Rh(3+) ion (Rh d(6)) in a regular octahedral coordination, which forms fully occupied t(2g)(6) and empty e(g)(0) as a result of ligand-field splitting, we demonstrated that Rh-doped ZnGa(2)O(4) had midgap states created by t(2g)(6) and e(g)(0) that had
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Bipin Pandey et al.
Langmuir : the ACS journal of surfaces and colloids, 28(38), 13705-13711 (2012-09-01)
This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide
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ChemSusChem, 5(11), 2200-2206 (2012-10-24)
The deposition of hydrogen evolution sites on photocatalysts is a crucial step in the multistep process of synthesizing a catalyst that is active for overall photocatalytic water splitting. An alternative approach to conventional photodeposition was developed, applying the photocatalytic reforming
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