215066
Gallium oxide
≥99.99% trace metals basis
Synonym(s):
Digallium trioxide, Galia, Gallium trioxide, Gallium(III) oxide
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About This Item
Empirical Formula (Hill Notation):
Ga2O3
CAS Number:
Molecular Weight:
187.44
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352303
EC Number:
234-691-7
MDL number:
Product Name
Gallium(III) oxide, ≥99.99% trace metals basis
InChI key
QZQVBEXLDFYHSR-UHFFFAOYSA-N
InChI
1S/2Ga.3O
SMILES string
O=[Ga]O[Ga]=O
assay
≥99.99% trace metals basis
form
(crystalline powder)
reaction suitability
reagent type: catalyst
core: gallium
density
5.88 g/mL at 25 °C
Quality Level
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Application
Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.
Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.
It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.
It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.
General description
Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.
Storage Class
11 - Combustible Solids
wgk
WGK 2
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
Eyeshields, Gloves, type N95 (US)
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Naoya Kumagai et al.
Chemical communications (Cambridge, England), 47(6), 1884-1886 (2010-12-07)
Using the Rh(3+) ion (Rh d(6)) in a regular octahedral coordination, which forms fully occupied t(2g)(6) and empty e(g)(0) as a result of ligand-field splitting, we demonstrated that Rh-doped ZnGa(2)O(4) had midgap states created by t(2g)(6) and e(g)(0) that had
Baoxiu Zhao et al.
Journal of environmental sciences (China), 24(4), 774-780 (2012-08-17)
Perfluorooctanoic acid (PFOA) is a new-found hazardous persistent organic pollutant, and it is resistant to decomposition by hydroxyl radical (HO*) due to its stable chemical structure and the high electronegativity of fluorine. Photocatalytic reduction of PFOA with beta-Ga2O3 in anoxic
Bipin Pandey et al.
Langmuir : the ACS journal of surfaces and colloids, 28(38), 13705-13711 (2012-09-01)
This paper reports the formation of self-organized nanoporous gallium oxide by anodization of solid gallium metal. Because of its low melting point (ca. 30 °C), metallic gallium can be shaped into flexible structures, permitting the fabrication of nanoporous anodic oxide
Yi-Jen Wu et al.
ACS nano, 4(3), 1393-1398 (2010-02-13)
Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance of the gold nanopeas and nanorods in the Ga(2)O(3) nanowires. As the
Rujia Zou et al.
Small (Weinheim an der Bergstrasse, Germany), 7(23), 3377-3384 (2011-10-06)
Nanoelectromechanical system switches are seen as key devices for fast switching in communication networks since they can be switched between transmitting and receiving states with an electrostatic command. Herein, the fabrication of practical, nanoscale electrically/thermally driven switches is reported based
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