All Photos(1)
Synonym(s):
1,1,1,2,2,2-Hexachlorodisilane, Disilicon hexachloride, HCDS
Linear Formula:
(SiCl3)2
CAS Number:
Molecular Weight:
268.89
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23
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Assay
96%
form
liquid
refractive index
n20/D 1.475 (lit.)
bp
144-145.5 °C (lit.)
density
1.562 g/mL at 25 °C (lit.)
SMILES string
Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl
InChI
1S/Cl6Si2/c1-7(2,3)8(4,5)6
InChI key
LXEXBJXDGVGRAR-UHFFFAOYSA-N
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General description
Hexachlorodisilane (HCDS) is a chlorosilane used as a precursor for producing disilanes. It is a dioxidizer that is used in the production of silicon films and silicon nitride based films.
Application
HCDS can be used in the fabrication of silica aerogels by chemical vapor deposition (CVD), which can be potentially used as encapsulating agents and thermal insulators. It can also be used to synthesize 1,1,1,2,2,2-hexaamino-disilanes using CVD, which forms silicon-based films for microelectronic-based applications.
HCDS may be used as a reducing agent. It may be combined with ammonia to form silicon nitride by chemical vapor deposition(CVD) technique.
accessory
Product No.
Description
Pricing
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Skin Corr. 1B
Supplementary Hazards
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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The Raman Spectrum of Hexachlorodisilane
Katayama M, et al.
J. Chem. Phys. , 18(4), 506-509 (1950)
Chemical vapor deposition of silicon films using hexachlorodisilane
Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings, 77, 709-709 (1986)
Film Properties of Low?k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia.
Tanaka M , et al.
Journal of the Electrochemical Society, 147(6), 2284-2289 (2000)
A family of 1, 1, 1, 2, 2, 2-hexa (-primary-) amino-disilanes as potential CVD precursors: Tuning thermal properties by small variation of the substituent.
Du L, et al.
Polyhedron, 117(5), 729-734 (2016)
Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films.
Taylor, R. C., & Scott, B. A.
Journal of the Electrochemical Society, 136(8), 2382-2386 (1989)
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