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Merck
CN

205184

Hexachlorodisilane

96%

Synonym(s):

1,1,1,2,2,2-Hexachlorodisilane, Disilicon hexachloride, HCDS

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About This Item

Linear Formula:
(SiCl3)2
CAS Number:
13465-77-5
Molecular Weight:
268.89
NACRES:
NA.23
PubChem Substance ID:
24852311
UNSPSC Code:
12352103
EC Number:
236-704-1
MDL number:
MFCD00011599

Key Documents

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Product Name

Hexachlorodisilane, 96%

InChI key

LXEXBJXDGVGRAR-UHFFFAOYSA-N

InChI

1S/Cl6Si2/c1-7(2,3)8(4,5)6

SMILES string

Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl

assay

96%

form

liquid

refractive index

n20/D 1.475 (lit.)

bp

144-145.5 °C (lit.)

density

1.562 g/mL at 25 °C (lit.)

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General description

Hexachlorodisilane (HCDS) is a chlorosilane used as a precursor for producing disilanes. It is a dioxidizer that is used in the production of silicon films and silicon nitride based films.

Application

HCDS can be used in the fabrication of silica aerogels by chemical vapor deposition (CVD), which can be potentially used as encapsulating agents and thermal insulators. It can also be used to synthesize 1,1,1,2,2,2-hexaamino-disilanes using CVD, which forms silicon-based films for microelectronic-based applications.
HCDS may be used as a reducing agent. It may be combined with ammonia to form silicon nitride by chemical vapor deposition(CVD) technique.

pictograms

Corrosion
GHS05

signalword

Danger

hcodes

H314

Hazard Classifications

Skin Corr. 1B

supp_hazards

EUH014

Storage Class

8A - Combustible corrosive hazardous materials

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

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Certificates of Analysis (COA)

Lot/Batch Number
SHBL6986
SHBL7092
MKBF7180V
63896CK
47596PJ

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Film Properties of Low?k Silicon Nitride Films Formed by Hexachlorodisilane and Ammonia.
Tanaka M , et al.
Journal of the Electrochemical Society, 147(6), 2284-2289 (2000)
The Raman Spectrum of Hexachlorodisilane
Katayama M, et al.
J. Chem. Phys. , 18(4), 506-509 (1950)
Z Yu et al.
Journal of chromatography. A, 903(1-2), 183-191 (2001-01-12)
Carbon isotopic compositions of aetio I occurring in the form of free-base, nickel, demetallation, dihydroxysilicon(IV) and bis(tert.-butyldimethylsiloxy)silicon(IV) [(tBDMSO)2Si(IV)] have shown that it has experienced no obvious isotope fractionation during the synthesis of [(tBDMSO)2Si(IV)] porphyrin from aetio I. Here, aetio I
Enhancing mechanical properties of silica aerogels
Obrey, K. A., Wilson, K. V., & Loy, D. A.
Journal of Non-Crystalline Solids, 375(19), 3435-3441 (2011)
Chemical vapor deposition of silicon films using hexachlorodisilane
Taylor, R. C., Scott, B. A., Lin, S. T., LeGoues, F., & Tsang, J. C.
MRS Proceedings, 77, 709-709 (1986)
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