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Merck
CN

376779

2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane

97%

Synonym(s):

(2,3,5,6-Tetrafluoro-2,5-cyclohexadiene-1,4-diylidene)dimalononitrile, 7,7,8,8-Tetracyano-2,3,5,6-tetrafluoroquinodimethane, F4TCNQ

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About This Item

Empirical Formula (Hill Notation):
C12F4N4
CAS Number:
Molecular Weight:
276.15
UNSPSC Code:
12352103
NACRES:
NA.23
PubChem Substance ID:
MDL number:
Beilstein/REAXYS Number:
2157887
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InChI

1S/C12F4N4/c13-9-7(5(1-17)2-18)10(14)12(16)8(11(9)15)6(3-19)4-20

SMILES string

FC1=C(F)C(\C(F)=C(F)/C1=C(\C#N)C#N)=C(\C#N)C#N

InChI key

IXHWGNYCZPISET-UHFFFAOYSA-N

assay

97%

form

solid

mp

285-290 °C (lit.)

Quality Level

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General description

2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) is a dopant used in the fabrication of organic semiconductors. It can tune the electronic properties as its lowest unoccupied molecular orbital is at a desirable energy level required to oxidize a wide range of semiconductors.
2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) are p-type molecules, used as a strong acceptor dopant , it generates free holes.

Application

F4-TCNQ can be doped with poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) to form a hole transport material (HTL), which can be used to achieve an energy efficiency of 16% for a semi-transparent perovskite solar cell. It can be used as a p-type dopant to form a blended composite film with poly(3-hexylthiophene) (P3HT) having enhanced charge mobility, which can be potentially useful in organic photovoltaics.
F4-TCNQ is the p-type dopant for hole-only devices and field effect transistors with organic hole transport layers (HTL). It is used in the preparation of a bilayer structure of F4-TCNQ and pentacene to study improved thermoelectric performance of organic thin films.

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Skull and crossbones

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Danger

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral

Storage Class

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

wgk

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

ppe

Eyeshields, Faceshields, Gloves, type P2 (EN 143) respirator cartridges


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A simple method for controllable solution doping of complete polymer field-effect transistors
Ingram IDV, et al.
Applied Physics Letters, 104(15), 581-581 (2014)
Enhancing hole transports and generating hole traps by doping organic hole-transport layers with p-type molecules of 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8-tetracyanoquinodimethane
Matsushima T and Adachi C
Thin Solid Films, 517(2), 874-877 (2008)
Taiki Sawada et al.
Nature communications, 11(1), 4839-4839 (2020-09-26)
Transistors, the most important logic elements, are maintained under dynamic influence during circuit operations. Practically, circuit design protocols and frequency responsibility should stem from a perfect agreement between the static and dynamic properties. However, despite remarkable improvements in mobility for
David Kiefer et al.
Advanced science (Weinheim, Baden-Wurttemberg, Germany), 4(1), 1600203-1600203 (2017-01-21)
Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution
The chemical and structural origin of efficient p-type doping in P3HT
Duong DT, et al.
Organic Electronics, 14(5), 1330-1336 (2013)

Articles

Highly reducing or oxidizing species enhance organic semiconductor conductivity by reducing charge-carrier injection barriers.

Fabrication procedure of organic field effect transistor device using a soluble pentacene precursor.

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