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Merck
CN
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文件

755141

Sigma-Aldrich

双层碳纳米管

short, ≤10% Metal Oxide(TGA)

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别名:
DWNT, 双壁碳纳米管
CAS号:
308068-56-6
MDL编号:
MFCD06411993
UNSPSC代码:
12352103
NACRES:
NA.23

形式

powder

平均直径× 长度

3.5 nm × 3 μm , TEM

杂质

≤10% Metal Oxide (TGA)

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一般描述

Structure of double walled carbon nanotubes (DWNTs) can be imagined as a two coaxial concentric single walled carbon nanotubes (SWNTs). It has been prepared by catalytic chemical vapor deposition. DWNTs exhibit excellent field emission properties and may be potentially useful as field emission displays (FEDs) and field emission transistors (FETs).

应用

Applications include:
  • Electronics
  • Sensors
  • Composites
  • Energy Storage
  • Study of Life Science systems

制备说明

Catalytic Carbon Vapor Deposition (CCVD) Method

法律信息

Product of Nanocyl, Inc.

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

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Size-selective growth of double-walled carbon nanotube forests from engineered iron catalysts.
Yamada T, et al.
Nature Nanotechnology, 1(2), 131-136 (2006)
Gram-scale CCVD synthesis of double-walled carbon nanotubes.
Flahaut E, et al.
Chemical Communications (Cambridge, England), 12, 1442-1443 (2003)
Wai Li Ling et al.
ACS nano, 5(2), 730-737 (2011-01-11)
The classical pathway of complement is an essential component of the human innate immune system involved in the defense against pathogens as well as in the clearance of altered self-components. Activation of this pathway is triggered by C1, a multimolecular
Dominick J Bindl et al.
ACS nano, 4(10), 5657-5664 (2010-10-07)
Semiconducting single-walled carbon nanotubes (s-SWCNTs) have strong near-infrared and visible absorptivity and exceptional charge transport characteristics, rendering them highly attractive semiconductor absorbers for photovoltaic and photodetector technologies. However, these applications are limited by a poor understanding of how photogenerated charges
Amin Salehi-Khojin et al.
ACS nano, 5(1), 153-158 (2010-12-29)
There has been recent controversy whether the response seen in carbon nanotube (CNT) chemiresistors is associated with a change in the resistance of the individual nanotubes or changes in the resistance of the junctions. In this study, we carry out

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