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质量水平
形式
crystalline (cubic (a=3.905 Å))
介电常数
~300
硬度
6 (, Mohs)
反应适用性
reagent type: catalyst
core: titanium
尺寸
10 mm × 10 mm × 0.5 mm
mp
2060 °C (lit.)
2080 °C
密度
4.81 g/mL at 25 °C (lit.)
5.175 g/mL at 25 °C
半导体性质
<100>
SMILES字符串
[Sr++].[O-][Ti]([O-])=O
InChI
1S/3O.Sr.Ti/q;2*-1;+2;
InChI key
VEALVRVVWBQVSL-UHFFFAOYSA-N
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物理属性
损耗角正切 @10GHz: ~5 x 10-4 @ 300K, ~3 x 10-4 @ 77K; 热膨胀:10.4 (x 10-6/°C)
外形
cubic (a = 3.905 Å)
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
ACS nano, 6(8), 7420-7426 (2012-07-24)
SrTiO(3) (STO) is a large band gap (3.2 eV) semiconductor that catalyzes the overall water splitting reaction under UV light irradiation in the presence of a NiO cocatalyst. As we show here, the reactivity persists in nanoscale particles of the
Sensors (Basel, Switzerland), 11(4), 3439-3465 (2011-12-14)
Resistive oxygen sensors are an inexpensive alternative to the classical potentiometric zirconia oxygen sensor, especially for use in harsh environments and at temperatures of several hundred °C or even higher. This device-oriented paper gives a historical overview on the development
ACS nano, 7(1), 117-125 (2012-12-04)
Novel PMMA-STO-CNT matrices were created by opened-tip vertically aligned multiwalled carbon nanotubes (VA-MWCNTs) with conformal coatings of strontium titanate (STO) and poly(methyl methacrylate) (PMMA). Emission threshold of 0.8 V/μm was demonstrated, about 5-fold lower than that of the as-grown VA-MWCNTs.
Chemically driven nanoscopic magnetic phase separation at the SrTiO(3) (001)/La(1-x) Sr(x) CoO(3) interface.
Advanced materials (Deerfield Beach, Fla.), 23(24), 2711-2715 (2011-04-21)
Ultramicroscopy, 111(7), 912-919 (2011-06-15)
The knowledge of the valence electron distribution is essential for understanding the properties of materials. However this information is difficult to obtain from HREM images because it is easily obscured by the large scattering contribution of core electrons and by
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Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
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