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质量水平
表单
crystalline (cubic (a=3.905 Å))
介电常数
~300
硬度
6 (, Mohs)
反应适用性
reagent type: catalyst
core: titanium
尺寸
10 mm × 10 mm × 0.5 mm
mp
2060 °C (lit.)
2080 °C
密度
4.81 g/mL at 25 °C (lit.)
5.175 g/mL at 25 °C
半导体性质
<100>
SMILES字符串
[Sr++].[O-][Ti]([O-])=O
InChI
1S/3O.Sr.Ti/q;2*-1;+2;
InChI key
VEALVRVVWBQVSL-UHFFFAOYSA-N
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物理属性
损耗角正切 @10GHz: ~5 x 10-4 @ 300K, ~3 x 10-4 @ 77K; 热膨胀:10.4 (x 10-6/°C)
外形
cubic (a = 3.905 Å)
储存分类代码
11 - Combustible Solids
WGK
WGK 3
闪点(°F)
Not applicable
闪点(°C)
Not applicable
个人防护装备
Eyeshields, Gloves, type N95 (US)
Physical review letters, 106(3), 036101-036101 (2011-03-17)
The evolution of the atomic structure of LaAlO_{3} grown on SrTiO_{3} was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions
Chemically driven nanoscopic magnetic phase separation at the SrTiO(3) (001)/La(1-x) Sr(x) CoO(3) interface.
Advanced materials (Deerfield Beach, Fla.), 23(24), 2711-2715 (2011-04-21)
ACS nano, 6(8), 7420-7426 (2012-07-24)
SrTiO(3) (STO) is a large band gap (3.2 eV) semiconductor that catalyzes the overall water splitting reaction under UV light irradiation in the presence of a NiO cocatalyst. As we show here, the reactivity persists in nanoscale particles of the
Nanotechnology, 23(49), 495715-495715 (2012-11-17)
The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was
Sensors (Basel, Switzerland), 11(4), 3439-3465 (2011-12-14)
Resistive oxygen sensors are an inexpensive alternative to the classical potentiometric zirconia oxygen sensor, especially for use in harsh environments and at temperatures of several hundred °C or even higher. This device-oriented paper gives a historical overview on the development
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Spintronics offer breakthroughs over conventional memory/logic devices with lower power, leakage, saturation, and complexity.
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