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Merck
CN

396141

Sigma-Aldrich

钛酸锶

powder, 99%

别名:

氧化锶钛

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About This Item

线性分子式:
SrTiO3
CAS号:
分子量:
183.49
EC 号:
MDL编号:
UNSPSC代码:
12352300
PubChem化学物质编号:
NACRES:
NA.23

质量水平

方案

99%

表单

powder

反应适用性

reagent type: catalyst
core: titanium

mp

2060 °C (lit.)

密度

4.81 g/mL at 25 °C (lit.)

SMILES字符串

[Sr++].[O-][Ti]([O-])=O

InChI

1S/3O.Sr.Ti/q;2*-1;+2;

InChI key

VEALVRVVWBQVSL-UHFFFAOYSA-N

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储存分类代码

11 - Combustible Solids

WGK

WGK 3

闪点(°F)

Not applicable

闪点(°C)

Not applicable

个人防护装备

Eyeshields, Gloves, type N95 (US)


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S A Pauli et al.
Physical review letters, 106(3), 036101-036101 (2011-03-17)
The evolution of the atomic structure of LaAlO_{3} grown on SrTiO_{3} was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions
Chemically driven nanoscopic magnetic phase separation at the SrTiO(3) (001)/La(1-x) Sr(x) CoO(3) interface.
Maria A Torija et al.
Advanced materials (Deerfield Beach, Fla.), 23(24), 2711-2715 (2011-04-21)
Troy K Townsend et al.
ACS nano, 6(8), 7420-7426 (2012-07-24)
SrTiO(3) (STO) is a large band gap (3.2 eV) semiconductor that catalyzes the overall water splitting reaction under UV light irradiation in the presence of a NiO cocatalyst. As we show here, the reactivity persists in nanoscale particles of the
L Avilés Félix et al.
Nanotechnology, 23(49), 495715-495715 (2012-11-17)
The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was
Ralf Moos et al.
Sensors (Basel, Switzerland), 11(4), 3439-3465 (2011-12-14)
Resistive oxygen sensors are an inexpensive alternative to the classical potentiometric zirconia oxygen sensor, especially for use in harsh environments and at temperatures of several hundred °C or even higher. This device-oriented paper gives a historical overview on the development

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